G11C 13/0007
Comprising metal oxide memory material
Official title: {comprising metal oxide memory material, e.g. perovskites}
G11C13/0007 (Comprising metal oxide memory material) appears on 2,999 US grants and 3,246 published applications in this corpus.
Search patents in G11C- Granted patents
- 2,999
- Published applications
- 3,246
- Assignees
- 392
- Inventors
- 3,151
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 2 | 0 |
| 2001 | 1 | 0 |
| 2002 | 1 | 0 |
| 2003 | 8 | 13 |
| 2004 | 19 | 65 |
| 2005 | 44 | 57 |
| 2006 | 46 | 48 |
| 2007 | 26 | 64 |
| 2008 | 50 | 112 |
| 2009 | 49 | 109 |
| 2010 | 79 | 158 |
| 2011 | 153 | 245 |
| 2012 | 175 | 264 |
| 2013 | 269 | 236 |
| 2014 | 257 | 279 |
| 2015 | 289 | 202 |
| 2016 | 234 | 167 |
| 2017 | 220 | 193 |
| 2018 | 154 | 156 |
| 2019 | 185 | 205 |
| 2020 | 179 | 155 |
| 2021 | 135 | 133 |
| 2022 | 104 | 115 |
| 2023 | 102 | 99 |
| 2024 | 100 | 80 |
| 2025 | 81 | 52 |
| 2026 | 36 | 39 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Neural Network system, high density embedded-artificial synaptic element and operating method thereof29 Sep 2026US 12,748,957 B2National Tsing Hua University
- Logic drive using standard commodity programmable logic IC chips comprising non-volatile random access memory cells8 Sep 2026US 12,732,193 B2iCometrue Company Ltd.
- Logic drive using standard commodity programmable logic IC chips comprising non-volatile random access memory cells1 Sep 2026US 12,726,202 B2iCometrue Company Ltd.
- Breakdown mitigation for programmable resistance memory element25 Aug 2026US 12,718,858 B2SanDisk Technologies LLC
- Resistive memory device18 Aug 2026US 12,713,621 B2Samsung Electronics Co., Ltd.
- Logic drive using standard commodity programmable logic ic chips comprising non-volatile random access memory cells1 Oct 2026US 2026/0303097 A1iCometrue Company Ltd.
- In-memory acceleration using 6t-rrams with signed weight values13 Aug 2026US 2026/0237431 A1Government of the United States as Represented by the Secretary of the Air Force
- Semiconductor device, electronic apparatus including the same, and method of manufacturing the semiconductor device13 Aug 2026US 2026/0239674 A1Samsung Electronics Co., Ltd.
- RRAM Memory Cell Structure13 Aug 2026US 2026/0239894 A1Silicon Storage Technology, Inc.
- Cross-point array leakage compensation6 Aug 2026US 2026/0229265 A1SanDisk Technologies LLC
Most cited
By later US patents
- Electrically variable multi-state resistance computing375US 6,473,332 B1University of Houston System · 2002
- Programmable resistive device and memory using diode as selector332US 9,818,478 B2Attopsemi Technology Co., LTD · 2017
- Resistive random accress memory containing a conformal titanium aluminum carbide film and method of making330US 10,361,366 B2Tokyo Electron Limited · 2019
- Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines288US 7,983,065 B2SanDisk 3D LLC · 2011
- Cross point memory array using multiple thin films260US 6,753,561 B1Unity Semiconductor Corporation · 2004