G11C 11/5642
Sensing or reading circuits
Official title: {Sensing or reading circuits; Data output circuits}
G11C11/5642 (Sensing or reading circuits) appears on 4,947 US grants and 4,833 published applications in this corpus.
Search patents in G11C- Granted patents
- 4,947
- Published applications
- 4,833
- Assignees
- 380
- Inventors
- 3,870
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 2 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 1 | 0 |
| 1991 | 3 | 0 |
| 1992 | 8 | 0 |
| 1993 | 7 | 0 |
| 1994 | 5 | 0 |
| 1995 | 13 | 0 |
| 1996 | 14 | 0 |
| 1997 | 25 | 0 |
| 1998 | 71 | 0 |
| 1999 | 76 | 0 |
| 2000 | 96 | 0 |
| 2001 | 87 | 25 |
| 2002 | 72 | 71 |
| 2003 | 62 | 59 |
| 2004 | 47 | 73 |
| 2005 | 56 | 63 |
| 2006 | 55 | 70 |
| 2007 | 67 | 134 |
| 2008 | 119 | 162 |
| 2009 | 143 | 188 |
| 2010 | 132 | 146 |
| 2011 | 144 | 156 |
| 2012 | 166 | 147 |
| 2013 | 178 | 168 |
| 2014 | 212 | 237 |
| 2015 | 231 | 188 |
| 2016 | 253 | 223 |
| 2017 | 243 | 189 |
| 2018 | 211 | 205 |
| 2019 | 245 | 280 |
| 2020 | 349 | 368 |
| 2021 | 342 | 304 |
| 2022 | 288 | 327 |
| 2023 | 277 | 302 |
| 2024 | 285 | 280 |
| 2025 | 236 | 247 |
| 2026 | 123 | 221 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Enhanced read retry (ERR) for data recovery in flash memory6 Oct 2026US 12,755,797 B2SanDisk Technologies LLC
- Method of controlling a semiconductor memory including memory cells and a word line6 Oct 2026US 12,755,800 B2Kioxia Corporation
- Memory system performing read operation using read voltage15 Sep 2026US 12,738,324 B2Kioxia Corporation
- Memory systems and methods of controlling the same, and readable storage media1 Sep 2026US 12,725,661 B2Yangtze Memory Technologies Co., Ltd.
- Memory device capable of changing pass voltage, memory system, and operating method of the memory device1 Sep 2026US 12,725,665 B2Samsung Electronics Co., Ltd.
- Optimization of soft bit windows based on signal and noise characteristics of memory cells8 Oct 2026US 2026/0311755 A1Micron Technology, Inc.
- Method for forming memory device8 Oct 2026US 2026/0313870 A1National Taiwan University
- Memory system1 Oct 2026US 2026/0301801 A1Kioxia Corporation
- Method and apparatus for reading data stored in flash memory by referring to binary digit distribution characteristics of bit sequences read from flash memory17 Sep 2026US 2026/0279460 A1Silicon Motion, Inc.
- Method and apparatus for reading data stored in flash memory by referring to binary digit distribution characteristics of bit sequences read from flash memory17 Sep 2026US 2026/0279461 A1Silicon Motion, Inc.
Most cited
By later US patents
- Multi-state EEprom read and write circuits and techniques1,175US 5,172,338 ASunDisk Corporation · 1992
- Multi-state memory1,008US 6,222,762 B1SanDisk Corporation · 2001
- Semiconductor device and memory system940US 6,046,935 AKabushiki Kaisha Toshiba · 2000
- High density non-volatile flash memory without adverse effects of electric field coupling between adjacent floating gates827US 5,867,429 ASanDisk Corporation · 1999
- Highly compact EPROM and flash EEPROM devices819US 5,095,344 A1992