Memory device capable of changing pass voltage, memory system, and operating method of the memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsHyojin Ahn, Seoyeong Lee, Jungho Lee, Sungjun Hong
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Abstract
According to the inventive concept, a memory device may receive a pass voltage signal set in advance from a host and perform a verification operation with respect to a memory cell array based on the received pass voltage signal. The memory device includes an aggressor word line on which a read operation is performed, and a memory block including a victim word line adjacent to the aggressor word line, and a change in a read voltage with respect to the memory block is recorded and the recorded change in the read voltage is sent to the host.
Claims17
A memory device comprising:
- a memory cell array,
- wherein the memory cell array comprises:
- an aggressor word line on which a read operation is performed;
- and
- a memory block including a victim word line that is adjacent to the aggressor word line,
- wherein the memory device is configured to perform a verification operation on the memory cell array based on a pass voltage signal,
- wherein a change in a read voltage with respect to the memory block is recorded as a recorded change in the read voltage,
- wherein the memory device is configured to change a pass voltage based on the recorded change in the read voltage, and
- wherein the memory device is configured to, when a preset number of read operations is exceeded, change the pass voltage based on the recorded change in the read voltage.
An operating method of a memory device configured to perform a verification operation on a memory cell array based on a pass voltage, the operating method comprising:
- determining a memory block that is a target of data reading;
- recording a change in a read voltage of the memory block as a recorded change in the read voltage;
- and
- changing the pass voltage based on the recorded change in the read voltage, comprising, when a preset number of read operations is exceeded, changing the pass voltage based on the recorded change of the read voltage.
A memory device comprising:
- a memory cell array,
- wherein the memory cell array comprises:
- an aggressor word line on which a read operation is performed;
- and
- a memory block including a victim word line that is adjacent to the aggressor word line, and
- wherein the memory device is configured to perform a verification operation on the memory cell array based on a pass voltage signal, and configured to record a change in a read voltage with respect to the memory block as a recorded change, and
- wherein the recorded change in the read voltage is a changed read level of at least one memory cell included in the memory block.
Dependencies are inferred from the claim text.