G11C 11/417
For memory cells of the field-effect type
Official title: for memory cells of the field-effect type
G11C11/417 (For memory cells of the field-effect type) appears on 4,864 US grants and 4,327 published applications in this corpus.
Search patents in G11C- Granted patents
- 4,864
- Published applications
- 4,327
- Assignees
- 629
- Inventors
- 5,031
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 11 | 0 |
| 1977 | 6 | 0 |
| 1978 | 17 | 0 |
| 1979 | 13 | 0 |
| 1980 | 11 | 0 |
| 1981 | 14 | 0 |
| 1982 | 10 | 0 |
| 1983 | 17 | 0 |
| 1984 | 20 | 0 |
| 1985 | 20 | 0 |
| 1986 | 16 | 0 |
| 1987 | 9 | 0 |
| 1988 | 21 | 0 |
| 1989 | 36 | 0 |
| 1990 | 43 | 0 |
| 1991 | 37 | 0 |
| 1992 | 24 | 0 |
| 1993 | 29 | 0 |
| 1994 | 48 | 0 |
| 1995 | 48 | 0 |
| 1996 | 35 | 0 |
| 1997 | 41 | 0 |
| 1998 | 67 | 0 |
| 1999 | 58 | 0 |
| 2000 | 65 | 0 |
| 2001 | 72 | 23 |
| 2002 | 44 | 39 |
| 2003 | 55 | 57 |
| 2004 | 50 | 55 |
| 2005 | 60 | 66 |
| 2006 | 54 | 61 |
| 2007 | 63 | 70 |
| 2008 | 57 | 69 |
| 2009 | 65 | 62 |
| 2010 | 69 | 70 |
| 2011 | 59 | 66 |
| 2012 | 64 | 102 |
| 2013 | 105 | 147 |
| 2014 | 164 | 232 |
| 2015 | 260 | 280 |
| 2016 | 322 | 271 |
| 2017 | 337 | 261 |
| 2018 | 294 | 253 |
| 2019 | 274 | 267 |
| 2020 | 319 | 307 |
| 2021 | 261 | 270 |
| 2022 | 242 | 258 |
| 2023 | 213 | 301 |
| 2024 | 274 | 260 |
| 2025 | 217 | 294 |
| 2026 | 154 | 186 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Adiabatic circuits for cold scalable electronics6 Oct 2026US 12,754,878 B2Zettaflops LLC
- Memory circuits with keeper circuits and methods for operating the same6 Oct 2026US 12,755,778 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Low power read circuit for multi-bank memory6 Oct 2026US 12,755,779 B2Media Tek Singapore Pte. Ltd.
- Memory devices with RC tracking and methods for operating the same6 Oct 2026US 12,755,780 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Memory device6 Oct 2026US 12,755,781 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Dual tracking for fly bit line static random access memory (sram) architecture8 Oct 2026US 2026/0311750 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Memory device8 Oct 2026US 2026/0311751 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Memory device with adaptive write control and associated method8 Oct 2026US 2026/0311752 A1STMicroelectronics International N. V.
- Fly shared bit line on 4-cpp static random access memory (sram) cell and array8 Oct 2026US 2026/0311753 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Embedded memory device including cropped bitline structure and operating method thereof1 Oct 2026US 2026/0301805 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Dynamic sense amplifier for CMOS static RAM531US 4,843,264 AVisic, Inc. · 1989
- Semiconductor memory device with dummy word line/sense amplifier activation436US 4,435,793 ATokyo Shibaura Denki Kabushiki Kaisha · 1984
- Scannable sense amplifier circuit421US 5,915,084 AAdvanced Micro Devices, Inc. · 1999
- High density SRAM circuit with ratio independent memory cells325US 5,047,979 AIntegrated Device Technology, Inc. · 1991
- High density SRAM circuit with single-ended memory cells275US 5,265,047 AMonolithic System Technology, Inc. · 1993