G11C 11/2293
Timing circuits or methods
Official title: {Timing circuits or methods}
G11C11/2293 (Timing circuits or methods) appears on 360 US grants and 356 published applications in this corpus.
Search patents in G11C- Granted patents
- 360
- Published applications
- 356
- Assignees
- 60
- Inventors
- 353
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 2 |
| 2004 | 0 | 0 |
| 2005 | 2 | 1 |
| 2006 | 1 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 1 |
| 2009 | 0 | 0 |
| 2010 | 1 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 1 |
| 2013 | 0 | 1 |
| 2014 | 3 | 2 |
| 2015 | 2 | 2 |
| 2016 | 2 | 1 |
| 2017 | 10 | 14 |
| 2018 | 26 | 27 |
| 2019 | 35 | 47 |
| 2020 | 41 | 49 |
| 2021 | 52 | 52 |
| 2022 | 57 | 42 |
| 2023 | 39 | 36 |
| 2024 | 41 | 27 |
| 2025 | 26 | 23 |
| 2026 | 20 | 28 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor memory device and operating method of the same25 Aug 2026US 12,718,884 B2Samsung Electronics Co., Ltd.
- Multi-level bit-cell with non-linear polar material18 Aug 2026US 12,712,005 B1Kepler Computing Inc.
- Managing memory based on access duration11 Aug 2026US 12,706,136 B2Micron Technology, Inc.
- Ferroelectric memory and storage device9 Jun 2026US 12,652,806 B2Huawei Technologies Co., Ltd.
- Efficient memory operation using a destructive read memory array2 Jun 2026US 12,645,388 B2Advanced Micro Devices, Inc.
- Semiconductor device and method for driving semiconductor device10 Sep 2026US 2026/0268955 A1Semiconductor Energy Laboratory Co.Ltd.
- Ferroelectric memory devices and operation methods thereof3 Sep 2026US 2026/0260681 A1Yangtze Memory Technologies Co., Ltd.
- Adaptive memory management and control circuitry13 Aug 2026US 2026/0237432 A1Numem Inc.
- Cross-coupled differential fefet bit-cell circuit13 Aug 2026US 2026/0239624 A1
- Memory cell arrangements and method of operating a memory cell6 Aug 2026US 2026/0229266 A1Ferroelectric Memory GmbH
Most cited
By later US patents
- Detecting location within a network168US 10,397,742 B2Ivani, LLC · 2019
- Ferroelectric memory cell recovery113US 9,697,913 B1Micron Technology, Inc. · 2017
- Detecting location within a network105US 9,474,042 B1Ivani, LLC · 2016
- Ferroelectric memory cells78US 10,354,712 B2Micron Technology, Inc. · 2019
- Writing to cross-point non-volatile memory40US 9,613,676 B1Micron Technology, Inc. · 2017