Writing to cross-point non-volatile memory

A method, comprising:

• performing a first access operation for a first ferroelectric memory cell of a memory array comprising a plurality of ferroelectric memory cells;
• starting a timer based at least in part on performing the first access operation;
• and
• performing a second access operation for a second ferroelectric memory cell of the memory array based at least in part on the timer exceeding a threshold,
• wherein the threshold is based at least in part on a discharge rate of the first ferroelectric memory cell.

A method, comprising:

• applying during an access operation an access voltage to a ferroelectric memory cell that is in electronic communication with a selection component, wherein an amplitude of the access voltage is greater than a threshold voltage of the selection component;
• incrementing a counter based at least in part on applying the access voltage;
• and
• applying a discharge voltage to the ferroelectric memory cell based at least in part on the counter exceeding a threshold, wherein a polarity of the discharge voltage is opposite to a polarity of the access voltage, and wherein an amplitude of the discharge voltage is less than the threshold voltage of the selection component.

An apparatus, comprising:

• a ferroelectric memory cell and a selection component in electronic communication with and positioned between a first conductive line and a second conductive line;
• and
• a controller in electronic communication with the first conductive line and the second conductive line, wherein the controller is operable to:
• apply a first voltage to the first conductive line during an access operation;
• apply a second voltage to the second conductive line during the access operation, wherein a voltage across the ferroelectric memory cell and the selection component during the access operation comprises a difference between the first voltage and the second voltage;
• and
• apply a third voltage to the first conductive line during a discharge operation following the access operation, wherein the third voltage has an amplitude that is based at least in part on a threshold voltage of the selection component.