Ferroelectric memory and storage device

A storage device, wherein the storage device comprises:

• a controller, configured to control reading and writing of a ferroelectric memory;
• and
• the ferroelectric memory, comprising:
• at least one storage cell, wherein each storage cell comprises:
• a transistor, comprising a gate electrode, a source electrode, and a drain electrode;
• a first ferroelectric capacitor, comprising a first electrode and a second electrode, wherein the first electrode of the first ferroelectric capacitor is coupled to the gate electrode, and the second electrode of the first ferroelectric capacitor is coupled to a word line;
• and
• at least one voltage divider capacitor, comprising a first electrode and a second electrode, wherein
• the first electrode of each voltage divider capacitor is separately coupled to the gate electrode, and the second electrode of each voltage divider capacitor is separately coupled to the source electrode;
• and
• at least one first capacitor, wherein the first capacitor is a high-dielectric-constant capacitor;
• and at least one second capacitor, wherein the second capacitor is a ferroelectric capacitor.