G11C 11/2275
Writing or programming circuits or methods
Official title: {Writing or programming circuits or methods}
G11C11/2275 (Writing or programming circuits or methods) appears on 880 US grants and 970 published applications in this corpus.
Search patents in G11C- Granted patents
- 880
- Published applications
- 970
- Assignees
- 166
- Inventors
- 1,071
- Latest grant
- 1 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2007 | 0 | 1 |
| 2008 | 1 | 1 |
| 2009 | 0 | 2 |
| 2010 | 2 | 1 |
| 2011 | 0 | 0 |
| 2012 | 1 | 7 |
| 2013 | 2 | 4 |
| 2014 | 10 | 11 |
| 2015 | 11 | 17 |
| 2016 | 19 | 24 |
| 2017 | 41 | 40 |
| 2018 | 59 | 67 |
| 2019 | 79 | 92 |
| 2020 | 86 | 109 |
| 2021 | 99 | 112 |
| 2022 | 122 | 122 |
| 2023 | 108 | 98 |
| 2024 | 103 | 99 |
| 2025 | 79 | 75 |
| 2026 | 58 | 88 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Ferroelectric in-memory computing1 Sep 2026US 12,725,646 B2International Business Machines Corporation
- Non-linear polar material based multi-capacitor bit-cell with shared gain element and access transistor25 Aug 2026US 12,718,860 B2Kepler Computing Inc.
- Memory cell arrangement and method of reading a capacitive memory cell25 Aug 2026US 12,718,861 B2Ferroelectric Memory GmbH
- Semiconductor memory device and operating method of the same25 Aug 2026US 12,718,884 B2Samsung Electronics Co., Ltd.
- Multi-level bit-cell with non-linear polar material18 Aug 2026US 12,712,005 B1Kepler Computing Inc.
- Ferroelectric memory device with multi-level bit cell1 Oct 2026US 2026/0304780 A1GLOBALFOUNDRIES U. S. Inc.
- Bank configurable power modes24 Sep 2026US 2026/0288225 A1Micron Technology, Inc.
- Memory device, operating method thereof, and memory system24 Sep 2026US 2026/0290420 A1Yangtze Memory Technologies Co., Ltd.
- Memory devices, operating methods thereof and memory systems24 Sep 2026US 2026/0290421 A1Yangtze Memory Technologies Holding Co., Ltd.
- Semiconductor device and method of manufacturing semiconductor device24 Sep 2026US 2026/0293145 A1SK hynix Inc.
Most cited
By later US patents
- Ferroelectric memory cell recovery113US 9,697,913 B1Micron Technology, Inc. · 2017
- Analog ferroelectric memory with improved temperature range95US 9,697,882 B1Radiant Technologies, Inc. · 2017
- Reprogrammable non-volatile ferroelectric latch for use with a memory controller95US 9,858,979 B1Micron Technology, Inc. · 2018
- CMOS analog memories utilizing ferroelectric capacitors92US 9,324,405 B2Radiant Technologies, Inc. · 2016
- Ferroelectric memory cell for an integrated circuit91US 10,600,808 B2NaMLab gGmbH · 2020