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US 2026/0293145 A1Published application
Semiconductor device and method of manufacturing semiconductor device
AssigneeSK hynix Inc.
InventorHee Sung KONG
Life of this patent
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Abstract
A semiconductor device may include a gate structure including conductive layers and insulating layers alternately stacked, a metal channel layer extending through the gate structure, a first semiconductor channel layer extending through the gate structure and connecting to the metal channel layer, and a ferroelectric layer surrounding the metal channel layer and the first semiconductor channel layer.
Claims15
A method of manufacturing a semiconductor device, the method comprising:
- forming a stack including first material layers and second material layers alternately stacked;
- forming a first opening in the stack;
- forming a ferroelectric layer in the first opening;
- forming a metal channel layer in the ferroelectric layer;
- forming a second opening by partially etching the metal channel layer;
- and
- forming a first semiconductor channel layer in the second opening.
4 more elements
A method of manufacturing a semiconductor device, the method comprising:
- forming a source line;
- forming a source select line on the source line;
- forming a stack including first material layers and second material layers alternately stacked on the source select line;
- forming an opening extending through the stack and the source select line into the source line;
- forming a second semiconductor channel layer passing through the source select line and connecting to the source line, in the opening;
- forming a metal channel layer extending through the stack and connecting to the second semiconductor channel layer, in the opening;
- and
- forming a first semiconductor channel layer extending through the stack and connecting to the metal channel layer, in the opening.
5 more elements
Dependencies are inferred from the claim text.