G03F 7/0041
Providing an etching agent upon exposure
Official title: {providing an etching agent upon exposure (G03F7/075 takes precedence; photolytic halogen compounds G03F7/0295)}
G03F7/0041 (Providing an etching agent upon exposure) appears on 66 US grants and 87 published applications in this corpus.
Search patents in G03F- Granted patents
- 66
- Published applications
- 87
- Assignees
- 56
- Inventors
- 290
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 2 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 2 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 1 |
| 2004 | 0 | 1 |
| 2005 | 0 | 0 |
| 2006 | 1 | 1 |
| 2007 | 0 | 1 |
| 2008 | 0 | 1 |
| 2009 | 2 | 1 |
| 2010 | 1 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 2 |
| 2013 | 0 | 6 |
| 2014 | 2 | 11 |
| 2015 | 11 | 4 |
| 2016 | 3 | 6 |
| 2017 | 2 | 5 |
| 2018 | 6 | 2 |
| 2019 | 6 | 7 |
| 2020 | 3 | 8 |
| 2021 | 4 | 8 |
| 2022 | 2 | 5 |
| 2023 | 6 | 8 |
| 2024 | 1 | 1 |
| 2025 | 1 | 4 |
| 2026 | 4 | 4 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Hardmask composition, hardmask layer, and pattern forming method6 Oct 2026US 12,754,481 B2Samsung SDI.Co., Ltd.
- Composition for forming silicon-containing metal hard mask and patterning process30 Jun 2026US 12,668,700 B2Shin-Etsu Chemical Co., Ltd.
- Resist topcoat composition, and method of forming patterns using the composition31 Mar 2026US 12,590,221 B2Samsung Electronics Co., Ltd.
- Optical devices and methods for manufacturing the optical devices10 Mar 2026US 12,572,079 B2II-Vi Delaware, Inc.
- Electron beam lithography with a bilayer resist11 Mar 2025US 12,248,248 B2The Boeing Company
- High chi block copolymer (bcp) pattern on latent extreme ultraviolet (euv) images8 Oct 2026US 2026/0310085 A1APPLIED Materials.Inc.
- Method for producing printed wiring board, photosensitive resin composition, photosensitive resin film, printed wiring board, and semiconductor package2 Jul 2026US 2026/0190248 A1Resonac Corporation
- Substrate processing method and substrate processing apparatus19 Mar 2026US 2026/0079393 A1Tokyo Electron Limited
- Semiconductor photoresist compositions and methods of forming patterns using the compositions5 Feb 2026US 2026/0036902 A1Samsung SDI.Co., Ltd.
- Compound for forming metal-containing film, composition for forming metal-containing film, and patterning process27 Nov 2025US 2025/0362595 A1Shin-Etsu Chemical Co., Ltd.
Most cited
By later US patents
- Method of making a semiconductor device utilizing a light-sensitive etching agent477US 3,960,559 AFuji Photo Film Co., Ltd. · 1976
- Sequential infiltration synthesis for advanced lithography93US 8,980,418 B2Uchicago Argonne, LLC · 2015
- Photoresist pattern fabrication employing chemically amplified metalized material86US 4,921,778 AShipley Company, L.L.C. · 1990
- Photoresist pattern fabrication employing chemically amplified metalized material59US 5,108,875 AShipley Company, L.L.C. · 1992
- Lithographic technique using laser for fabrication of electronic components and the like29US 4,877,480 ADigital Equipment Corporation · 1989