US 8,980,418 B2 · Sequential infiltration synthesis for advanced lithography

Abstract

A plasma etch resist material modified by an inorganic protective component via sequential infiltration synthesis (SIS) and methods of preparing the modified resist material. The modified resist material is characterized by an improved resistance to a plasma etching or related process relative to the unmodified resist material, thereby allowing formation of patterned features into a substrate material, which may be high-aspect ratio features. The SIS process forms the protective component within the bulk resist material through a plurality of alternating exposures to gas phase precursors which infiltrate the resist material. The plasma etch resist material may be initially patterned using photolithography, electron-beam lithography or a block copolymer self-assembly process.

Claims17

Dependent claims

A modified organic resist mask layer having an increased resistance to plasma etching or ion milling in response to transferring at least one patterned feature to a substrate material by plasma etching or ion milling, comprising:

an organic resist material disposed over the substrate material and including at least one patterned feature;
and
an inorganic protective etch component, comprising a metal or a metal oxide selected from the group consisting of aluminum oxide, titanium dioxide, zinc oxide, silicon dioxide, hafnium dioxide, zirconium dioxide, and tungsten, disposed over at least a portion of the surface of the organic resist material and within at least a portion of the organic resist material to a predetermined infiltration depth within the organic resist material forming a modified resist material,
wherein the plasma etch resistance of the organic resist mask layer is selectively controllable by establishing the infiltration depth of the inorganic protective etch component such that the at least one patterned feature has a high aspect ratio.

1 more element

an organic resist material disposed over the substrate material and including at least one patterned feature;
and
an inorganic protective etch component disposed over at least a portion of the surface of the organic resist material and within at least a portion of the organic resist material to a predetermined infiltration depth within the organic resist material forming a modified resist material,
wherein the plasma etch resistance of the organic resist mask layer is selectively controllable by establishing the infiltration depth of the inorganic protective etch component such that the at least one patterned feature has a high aspect ratio;
and further wherein the infiltration depth is less than a depth of the organic resist materials such that the modified resist material is separated from the substrate material by organic resist material.

2 more elements

Dependencies are inferred from the claim text.

Sequential infiltration synthesis for advanced lithography

Life of this patent

Sequential infiltration synthesis for advanced lithography

Life of this patent

Abstract

Claims17