Substrate processing method and substrate processing apparatus
AssigneeTokyo Electron Limited
InventorsKohei YAZAKI, Arnaud Alain Jean DAUENDORFFER, Kazuya DOBASHI, Keisuke YOSHIDA, Satoru SHIMURA
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Abstract
A substrate processing method includes performing, on a substrate having a resist film formed thereon, a reduction processing of reducing hydrocarbons contained in the resist film. The resist film includes a metal oxide resist, exposed to light, and developed to have a pattern. The method further includes performing a processing of reducing roughness of the resist film after being subjected to the reduction processing.
Claims20
A substrate processing method, comprising:
- performing, on a substrate having a resist film formed thereon, a reduction processing of reducing hydrocarbons contained in the resist film, the resist film including a metal oxide resist, exposed to light, and developed to have a pattern;
- and
- performing a processing of reducing roughness of the resist film after being subjected to the reduction processing.
A substrate processing method, comprising:
- placing, in a processing vessel, a substrate including a resist film formed thereon, the resist film including a metal oxide resist, exposed to light, and developed to have a pattern;
- supplying an inert gas into the processing vessel;
- and
- supplying a radio frequency power of 1000 W or higher to an electrode for plasma formation, and forming plasma from the inert gas to break down the pattern and modify the pattern.
A substrate processing apparatus, comprising:
- a first processor that performs, on a substrate having a resist film formed thereon, a reduction processing to reduce hydrocarbons contained in the resist film, the resist film including a metal oxide resist, exposed to light, and developed to have a pattern;
- and
- a second processor that performs a processing to reduce roughness of the resist film after being subjected to the reduction processing.
Dependencies are inferred from the claim text.