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US 3,960,559 AGranted
Method of making a semiconductor device utilizing a light-sensitive etching agent
AssigneeFuji Photo Film Co., Ltd.
InventorsGyoji Suzuki, Masayoshi Nagata, Takeshi Tomotsu, Hisatake Ono
Life of this patent
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Abstract
A light-sensitive etching agent comprising (a) a photodecomposable compound forming upon decomposition a material capable of etching a silicon compound containing film or capable of etching the film after reaction with another material, (b) a material capable of forming water upon exposure to light, (c) a binder and (d) a solvent, and a method of making a semiconductor device utilizing the light-sensitive etching agent.
Claims14
A method of making a semiconductor device, which comprises
- applying to a silicon containing film provided on a semiconductor substrate a light-sensitive etching agent comprising (a) a photodecomposable compound forming upon decomposition a material capable of etching said film in presence of water, (b) a material capable of forming water upon irradiation with light, (c) a binder inert to compounds (a), (b) and (d) and (d) a solvent inert to components (a) and (b), and then image-wise exposing said light sensitive etching agent to irradiation capable of decomposing said photodecomposable compound and said material capable of forming water to thereby selectively said film.
Dependencies are inferred from the claim text.