G01R 31/2858
Measuring of material aspects
Official title: {Measuring of material aspects, e.g. electro-migration [EM], hot carrier injection}
G01R31/2858 (Measuring of material aspects) appears on 202 US grants and 179 published applications in this corpus.
Search patents in G01R- Granted patents
- 202
- Published applications
- 179
- Assignees
- 103
- Inventors
- 503
- Latest grant
- 5 May 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 1 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 4 | 0 |
| 1997 | 3 | 0 |
| 1998 | 3 | 0 |
| 1999 | 3 | 0 |
| 2000 | 3 | 0 |
| 2001 | 1 | 0 |
| 2002 | 2 | 2 |
| 2003 | 5 | 4 |
| 2004 | 10 | 9 |
| 2005 | 9 | 1 |
| 2006 | 3 | 8 |
| 2007 | 3 | 7 |
| 2008 | 8 | 14 |
| 2009 | 10 | 12 |
| 2010 | 17 | 3 |
| 2011 | 3 | 7 |
| 2012 | 7 | 3 |
| 2013 | 0 | 6 |
| 2014 | 10 | 7 |
| 2015 | 1 | 7 |
| 2016 | 6 | 7 |
| 2017 | 11 | 18 |
| 2018 | 14 | 13 |
| 2019 | 10 | 11 |
| 2020 | 16 | 9 |
| 2021 | 10 | 6 |
| 2022 | 4 | 5 |
| 2023 | 6 | 8 |
| 2024 | 6 | 5 |
| 2025 | 8 | 4 |
| 2026 | 1 | 3 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Apparatus and method of measuring reliability for flash memory material through a current measurement5 May 2026US 12,618,893 B2SK hynic Inc.
- Apparatus and method estimating breakdown voltage of silicon dioxide film using neural network model18 Nov 2025US 12,474,390 B2Samsung Electronics Co., Ltd.
- Semiconductor device configured for gate dielectric monitoring14 Oct 2025US 12,442,850 B2Analog Devices International Unlimited Company
- Semiconductor structure, memory, and crack testing method9 Sep 2025US 12,412,790 B2Changxin Memory Technologies, Inc.
- Method and apparatus for measuring electromigration of solder joint12 Aug 2025US 12,385,986 B2Sanechips Technology Co., Ltd.
- Electromigration evaluation methodology with consideration of heat dissipating structure effects17 Sep 2026US 2026/0276698 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device including hydrogen sensing structure2 Jul 2026US 2026/0185959 A1SK hynix Inc.
- System and method of testing for rf-induced electromigration in semiconductor integrated circuits1 Jan 2026US 2026/0002983 A1Power Technology Solutions LLC
- Method and system for thermal-aware electromigration evaluation and circuit design27 Nov 2025US 2025/0362338 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Methods and apparatus to determine electrical properties of components30 Oct 2025US 2025/0334626 A1
Most cited
By later US patents
- Structure and method for monitoring stress-induced degradation of conductive interconnects167US 7,397,260 B2International Business Machines Corporation · 2008
- Test structures for on-chip real-time reliability testing94US 6,724,214 B2Chartered Semiconductor Manufacturing Ltd. · 2004
- Mobile ionic contamination detection in manufacture of semiconductor devices90US 6,348,808 B1LSI Logic Corporation · 2002
- On-clip high frequency reliability and failure test structures74US 5,625,288 ASandia Corporation · 1997
- System and method for measuring circuit performance degradation due to PFET negative bias temperature instability (NBTI)72US 6,731,179 B2International Business Machines Corporation · 2004