US 2026/0002983 A1 · SYSTEM AND METHOD OF TESTING FOR RF-INDUCED ELECTROMIGRATION IN SEMICONDUCTOR INTEGRATED CIRCUITS

Abstract

A system and method of using a multi-zone substrate to perform electromigration testing of integrated circuits in the high-frequency RF domain. Here, the device under test (DUT) is affixed to a single, multi-zone substrate with a high-temperature zone, a transitional thermal isolation zone, to a low-temperature zone. The high-temperature zone has a DUT interface with a localized heater arrangement. The low-temperature zone provides the interface with RF lines or high speed digital lines to the RF test instrumentation. The DUT input and output pins are attached to the high-temperature zone, and the configuration allows both direct current (DC) and RF stressing of the DUT. The high-temperature zone can raise the DUT temperature to 300-450° C. The RF test port and associated test equipment remain at room temperature.

Claims20

Dependent claims

A method of using a multi-zone test module to perform accelerated testing of high-frequency RF integrated circuits (DUT), said method comprising:

obtaining at least one multi-zone substrate, said substrate comprising a high-temperature zone and localized heater arrangement that is configured to accept at least one said DUT and a low-temperature zone configured with RF lines that connect said DUT to at least one test port on said low-temperature zone;
each said at least one test port comprising at least one test line;
wherein said DUT comprises at least one input pin, at least one output pin, and at least one ground pin;
attaching said DUT to said high-temperature zone and at least some of said test lines so that at least some of said test lines connect to at least some of said DUT's input, output, and ground pins;
using said localized heater arrangement to elevate the temperature of said high-temperature zone and said DUT to a temperature above 100° C., while simultaneously using said at least one test port, and DUT test equipment, to evaluate at least one function of said DUT over a range of RF frequencies and time intervals.

2 more elements

Dependencies are inferred from the claim text.

System and method of testing for rf-induced electromigration in semiconductor integrated circuits

Life of this patent

System and method of testing for rf-induced electromigration in semiconductor integrated circuits

Life of this patent

Abstract

Claims20