G01L 9/0042
Constructional details associated with semiconductive diaphragm sensors
Official title: {Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms (details about the integration or bonding of piezoresistor in or on the diaphragm G01L9/0052 and G01L9/0057 respectively)}
G01L9/0042 (Constructional details associated with semiconductive diaphragm sensors) appears on 1,292 US grants and 1,082 published applications in this corpus.
Search patents in G01L- Granted patents
- 1,292
- Published applications
- 1,082
- Assignees
- 473
- Inventors
- 2,307
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 10 | 0 |
| 1978 | 5 | 0 |
| 1979 | 2 | 0 |
| 1980 | 8 | 0 |
| 1981 | 5 | 0 |
| 1982 | 2 | 0 |
| 1983 | 3 | 0 |
| 1984 | 6 | 0 |
| 1985 | 4 | 0 |
| 1986 | 8 | 0 |
| 1987 | 5 | 0 |
| 1988 | 7 | 0 |
| 1989 | 18 | 0 |
| 1990 | 15 | 0 |
| 1991 | 24 | 0 |
| 1992 | 23 | 0 |
| 1993 | 20 | 0 |
| 1994 | 25 | 0 |
| 1995 | 14 | 0 |
| 1996 | 23 | 0 |
| 1997 | 24 | 0 |
| 1998 | 20 | 0 |
| 1999 | 21 | 0 |
| 2000 | 25 | 0 |
| 2001 | 22 | 8 |
| 2002 | 23 | 18 |
| 2003 | 29 | 25 |
| 2004 | 20 | 27 |
| 2005 | 25 | 30 |
| 2006 | 29 | 32 |
| 2007 | 29 | 34 |
| 2008 | 22 | 28 |
| 2009 | 23 | 23 |
| 2010 | 30 | 40 |
| 2011 | 31 | 35 |
| 2012 | 28 | 48 |
| 2013 | 39 | 57 |
| 2014 | 54 | 50 |
| 2015 | 54 | 56 |
| 2016 | 41 | 73 |
| 2017 | 63 | 86 |
| 2018 | 66 | 77 |
| 2019 | 67 | 62 |
| 2020 | 65 | 61 |
| 2021 | 48 | 52 |
| 2022 | 51 | 34 |
| 2023 | 42 | 41 |
| 2024 | 31 | 34 |
| 2025 | 18 | 27 |
| 2026 | 22 | 24 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- G01L 9/0044Constructional details of non-semiconductive diaphragms169
- G01L 9/0048Details about the mounting of the diaphragm to its support or about134
- G01L 9/0047Diaphragm with non uniform thickness124
- G01L 9/0045Diaphragm associated with a buried cavity123
- G01L 9/005Non square semiconductive diaphragm17
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Most cited
By later US patents
- Process for the production of thin semiconductor material films1,233US 5,374,564 ACommissariat A L' Energie Atomique · 1994
- Method of fabrication of a microstructure having an internal cavity302US 6,297,072 B1Interuniversitair Micro-Elktronica Centrum (IMEC VZW) · 2001
- Ultraminiature pressure sensor with addressable read-out circuit171US 5,113,868 AThe Regents of the University of Michigan · 1992
- Multipoint pressure-sensing catheter system167US 4,815,472 AThe Regents of the University of Michigan · 1989
- Photovoltaic device162US 5,738,731 ACrystal Device Corporation · 1998