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US 12,703,621 B2Granted
MEMS pressure sensor built using the beol metal layers of a solid-state semiconductor process
AssigneeNanusens SL
InventorJosep Montanyà Silvestre
Life of this patent
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Abstract
A MEMS pressure sensor is provided having a membrane made with one of plurality of metal layers. A lid is positioned above the membrane and connected to a plurality of cavity walls at distal ends of the membrane. The lid includes an array of holes positioned on a region of the lid. A fixed metal electrode is positioned below the lid.
Claims15
A MEMS pressure sensor comprising:
- a membrane made with one of plurality of metal layers;
- a lid positioned above the membrane and connected to a plurality of cavity walls at distal ends of the membrane, wherein the lid includes an array of holes positioned on a region of the lid;
- and
- a fixed metal electrode positioned below the lid;
- wherein a set of metal layers of the plurality metal layers are configured to be a pedestal;
- wherein the cavity walls are formed using at least one via structure;
- and
- wherein the at least one via structure comprises a double ring via.
5 more elements
A MEMS pressure sensor comprising:
- a metal layer made from one of a plurality of metal layers;
- and
- a pedestal, positioned below the metal layer, made from a set of different metal layers of the plurality of metal layers, wherein the pedestal reduces a capacitance gap at the center of the metal layer;
- wherein the metal layer is deflected from its central position when pressure is applied;
- and
- wherein the plurality of metal layers comprise of metal layers M1-M6, where the metal layer M6 is top most metal layer and the metal layer M5 is second most top metal layer, and wherein the pedestal is made with metal layers M1-M4 and a plurality of via structures V1-V3.
3 more elements
Dependencies are inferred from the claim text.