C30B 31/06
Diffusion or doping processes for single crystals or homogeneous polycrystalline material with
Official title: by contacting with diffusion material in the gaseous state
C30B31/06 (Diffusion or doping processes for single crystals or homogeneous polycrystalline material with) appears on 621 US grants and 238 published applications in this corpus.
Search patents in C30B- Granted patents
- 621
- Published applications
- 238
- Assignees
- 262
- Inventors
- 1,179
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 20 | 0 |
| 1977 | 8 | 0 |
| 1978 | 9 | 0 |
| 1979 | 4 | 0 |
| 1980 | 5 | 0 |
| 1981 | 2 | 0 |
| 1982 | 8 | 0 |
| 1983 | 8 | 0 |
| 1984 | 9 | 0 |
| 1985 | 15 | 0 |
| 1986 | 11 | 0 |
| 1987 | 7 | 0 |
| 1988 | 11 | 0 |
| 1989 | 12 | 0 |
| 1990 | 21 | 0 |
| 1991 | 21 | 0 |
| 1992 | 17 | 0 |
| 1993 | 15 | 0 |
| 1994 | 18 | 0 |
| 1995 | 18 | 0 |
| 1996 | 26 | 0 |
| 1997 | 29 | 0 |
| 1998 | 32 | 0 |
| 1999 | 30 | 0 |
| 2000 | 38 | 0 |
| 2001 | 27 | 12 |
| 2002 | 42 | 27 |
| 2003 | 18 | 16 |
| 2004 | 14 | 12 |
| 2005 | 10 | 14 |
| 2006 | 8 | 18 |
| 2007 | 8 | 12 |
| 2008 | 10 | 11 |
| 2009 | 7 | 5 |
| 2010 | 9 | 4 |
| 2011 | 5 | 5 |
| 2012 | 7 | 5 |
| 2013 | 5 | 7 |
| 2014 | 8 | 4 |
| 2015 | 1 | 4 |
| 2016 | 1 | 7 |
| 2017 | 4 | 16 |
| 2018 | 4 | 7 |
| 2019 | 7 | 2 |
| 2020 | 7 | 10 |
| 2021 | 4 | 2 |
| 2022 | 3 | 6 |
| 2023 | 5 | 7 |
| 2024 | 1 | 5 |
| 2025 | 9 | 8 |
| 2026 | 3 | 12 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Method of selectively forming crystalline boron-doped silicon germanium on a surface6 Oct 2026US 12,757,647 B2ASM IP Holding B. V.
- Method of forming an epitaxial layer1 Sep 2026US 12,727,402 B2ASM IP Holding B. V.
- Method of producing large GaAs and GaP infrared windows9 Jun 2026US 12,650,538 B2BAE Systems Information and Electronic Systems Integration Inc.
- Structures with boron- and gallium-doped silicon germanium layers and methods and systems for forming same23 Sep 2025US 12,421,620 B2ASM IP Holding B. V.
- Thermal processing techniques for metallic materials23 Sep 2025US 12,426,132 B2Carnegie Mellon University
- Gallium nitride crystal substrate8 Oct 2026US 2026/0308806 A1Sumitomo Chemical Company, Limited
- Silicon carbide epitaxial substrate and method of manufacturing the same1 Oct 2026US 2026/0297799 A1
- Doped polycrystalline sic wafer with improved flatness and electrical conductivity, and method for producing such a wafer20 Aug 2026US 2026/0242976 A1Mersen France Gennevilliers SAS
- Thermal processing techniques for metallic materials6 Aug 2026US 2026/0231301 A1Carnegie Mellon University
- Gallium nitride crystal substrate and method for manufacturing gallium nitride crystal substrate30 Jul 2026US 2026/0218412 A1Sumitomo Chemical Company, Limited
Most cited
By later US patents
- Gas introduction showerhead for an RTP chamber with upper and lower transparent plates and gas flow therebetween832US 5,781,693 AAPPLIED Materials.Inc. · 1998
- Conductor treating single-wafer type treating device and method for semi-conductor treating734US 7,235,137 B2Tokyo Electron Limited · 2007
- Vapor mass flow control system702US 4,436,674 AJ. C. Schumacher Co. · 1984
- Vapor mass flow control system629US 4,393,013 AJ. C. Schumacher Co. · 1983
- Rapid thermal processing apparatus for processing semiconductor wafers624US 5,444,217 AMoore Epitaxial, Inc. · 1995