C30B 31/16
Feed and outlet means for the gases
Official title: Feed and outlet means for the gases; Modifying the flow of the gases
C30B31/16 (Feed and outlet means for the gases) appears on 108 US grants and 23 published applications in this corpus.
Search patents in C30B- Granted patents
- 108
- Published applications
- 23
- Assignees
- 55
- Inventors
- 205
- Latest grant
- 13 Apr 2021
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 12 | 0 |
| 1977 | 3 | 0 |
| 1978 | 2 | 0 |
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 2 | 0 |
| 1983 | 2 | 0 |
| 1984 | 3 | 0 |
| 1985 | 5 | 0 |
| 1986 | 1 | 0 |
| 1987 | 1 | 0 |
| 1988 | 2 | 0 |
| 1989 | 2 | 0 |
| 1990 | 6 | 0 |
| 1991 | 5 | 0 |
| 1992 | 5 | 0 |
| 1993 | 5 | 0 |
| 1994 | 7 | 0 |
| 1995 | 3 | 0 |
| 1996 | 2 | 0 |
| 1997 | 4 | 0 |
| 1998 | 4 | 0 |
| 1999 | 7 | 0 |
| 2000 | 3 | 0 |
| 2001 | 3 | 2 |
| 2002 | 5 | 3 |
| 2003 | 0 | 1 |
| 2004 | 1 | 1 |
| 2005 | 0 | 1 |
| 2006 | 0 | 0 |
| 2007 | 1 | 2 |
| 2008 | 1 | 3 |
| 2009 | 0 | 0 |
| 2010 | 0 | 0 |
| 2011 | 1 | 0 |
| 2012 | 0 | 0 |
| 2013 | 1 | 2 |
| 2014 | 0 | 1 |
| 2015 | 0 | 1 |
| 2016 | 1 | 1 |
| 2017 | 0 | 2 |
| 2018 | 1 | 1 |
| 2019 | 2 | 0 |
| 2020 | 2 | 0 |
| 2021 | 1 | 0 |
| 2022 | 0 | 0 |
| 2023 | 0 | 0 |
| 2024 | 0 | 0 |
| 2025 | 0 | 1 |
| 2026 | 0 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- System based on low-pressure chemical vapor deposition for fabricating perovskite film from organic halide compound and metal halide compound13 Apr 2021US 10,975,498 B2Okinawa Institute of Science and Technology School Corporation
- Atomic layer deposition method8 Dec 2020US 10,858,736 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Inject insert for EPI chamber1 Sep 2020US 10,760,161 B2APPLIED Materials.Inc.
- Gas supply pipe, and gas treatment equipment30 Jul 2019US 10,364,498 B2Kabushiki Kaisha Toshiba
- Substrate treating apparatus19 Feb 2019US 10,208,401 B2Samsung Electronics Co., Ltd.
- Gallium nitride crystal substrate and method for manufacturing gallium nitride crystal substrate30 Jul 2026US 2026/0218412 A1Sumitomo Chemical Company, Limited
- Method for doping carbon in thin film on wafer13 Feb 2025US 2025/0054771 A1
- Substrate treating apparatus20 Sep 2018US 2018/0266017 A1Samsung Electronics Co., Ltd.
- System and method based on low-pressure chemical vapor deposition for fabricating perovskite film21 Sep 2017US 2017/0268128 A1Okinawa Institute of Science and Technology School Corporation
- Atomic Layer Deposition Method23 Mar 2017US 2017/0081761 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Gas introduction showerhead for an RTP chamber with upper and lower transparent plates and gas flow therebetween832US 5,781,693 AAPPLIED Materials.Inc. · 1998
- Conductor treating single-wafer type treating device and method for semi-conductor treating734US 7,235,137 B2Tokyo Electron Limited · 2007
- Vapor mass flow control system702US 4,436,674 AJ. C. Schumacher Co. · 1984
- Vapor mass flow control system629US 4,393,013 AJ. C. Schumacher Co. · 1983
- Apparatus and method for positioning gas injectors in a vertical furnace509US 6,435,865 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2002