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US 2017/0081761 A1Published application
Atomic Layer Deposition Method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChia-Yi Chuang, Hsing-Jui Lee, Ming-Te Chen
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Abstract
An atomic layer deposition apparatus includes a chamber including a plurality of regions; and a heating device respectively providing specific temperature ranges for the plurality of regions. By flowing precursor gases at different flow rates in the different regions, thin films can be simultaneously formed in the different regions having different film thicknesses.
Claims20
An atomic layer deposition process, comprising:
- providing a chamber having a plurality of regions;
- and
- injecting at least two depositing materials into respective ones of the plurality of regions to form a first thin film having a first thickness on a first substrate in a first region of the plurality of regions while simultaneously forming a second film having a second thickness on a second substrate in a second region of the plurality of regions, the second region being vertically offset from the first region.
A method comprising:
- placing a first wafer into a first region of a chamber and a second wafer into a second region of the chamber;
- heating the first region to a first predetermined temperature and heating the second region to a second predetermined temperature;
- delivering a first precursor gas at a first gaseous flow rate in the first region to form a first material at a first deposition rate while simultaneously delivering the first precursor gas at a second gaseous flow rate in the second region to form the first material at a second deposition rate different than the first deposition rate ;
- and
- subsequent to the step of delivering first precursor gas, delivering a second precursor gas at a third gaseous flow rate in the first region to form a second material at a third deposition rate while simultaneously delivering the precursor gas at a fourth gaseous flow rate in the second region to form the second material at a fourth deposition rate different than the third deposition rate.
2 more elements
A method comprising:
- providing a first wafer in a first region of a chamber and providing a second wafer in a second region of the chamber, the second region being vertically offset from the first region;
- and
- forming in the first region a first film having a first thickness, and forming in the second region a second film having a second thickness different from the first thickness simultaneously with forming of the first film having the first thickness, the first film and second film having the same composition, by:
- delivering a first precursor gas through a first injector having a first gas flow path, the first gas flow path including a first hole with a first geometric parameter and a second hole with a second geometric parameter different from the first geometric parameter, the first precursor gas being delivered at a first gaseous flow rate in the first region and simultaneously being delivered at a second gaseous flow rate in the second region;
- and
- delivering a second precursor gas through a second injector having a second gas flow path, the second gas flow path including a third hole with a third geometric parameter and a fourth hole with a fourth geometric parameter different from the third geometric parameter, the second precursor gas being delivered at a third gaseous flow rate in the first region and being delivered at a fourth gaseous flow rate in the second region.
3 more elements
Dependencies are inferred from the claim text.