System and method based on low-pressure chemical vapor deposition for fabricating perovskite film

A system for fabricating a perovskite film, wherein source materials include:

• an organic halide compound AX and a metal halide compound BX2, wherein halogen X in the AX and halogen X in the BX2 are the same or different, the system comprising:
• a housing for use as a furnace, the housing having a closed hollow structure elongated longitudinally, the housing comprising:
• an inlet portion and an outlet portion for inputting and outputting gases, respectively, the inlet portion configured to be adjusted for inputting an inert gas into the housing;
• a first section for use for loading an evaporation unit containing the AX for generating an AX gas, the first section corresponding substantially to an upstream section of the inert gas;
• and
• a second section for use for loading one or more substrates, each of which is pre-deposited with the BX2, the second section corresponding substantially to a downstream section of the inert gas;
• a first temperature control unit coupled to the first section of the housing for controlling a first temperature for the AX;
• and
• a second temperature control unit coupled to the second section of the housing for controlling a second temperature for the one or more substrates pre-deposited with the BX2.

A method for fabricating a perovskite film by using a system comprising a housing for use as a furnace, wherein the housing has a closed hollow structure longitudinally elongated and comprises:

• an inlet portion and an outlet portion for inputting and outputting gases, respectively, the inlet portion configured to be adjusted for inputting an inert gas into the housing;
• a first section corresponding substantially to an upstream section of the inert gas;
• and a second section corresponding substantially to a downstream section of the inert gas, and wherein source materials for the perovskite film include:
• an organic halide compound AX and a metal halide compound BX2, wherein halogen X in the AX and halogen X in the BX2 are the same or different, the method comprising:
• loading one or more substrates in the second section, wherein each of the one or more substrates is pre-deposited with the BX2;
• loading an evaporation unit containing the AX in the first section for generating an AX gas;
• pumping down the inside of the housing to a low pressure;
• controlling a second temperature for the one or more substrates pre-deposited with the BX2;
• controlling a first temperature for the AX;
• and
• adjusting the inlet portion to input an inert gas into the housing, wherein
• during deposition, the AX gas is carried by the inert gas inputted through the inlet portion, moves toward the one or more substrates, and reacts with the BX2 to form a perovskite film on each of the one or more substrates.