Atomic layer deposition method

A method comprising:

• placing a first wafer into a first region of a chamber and a second wafer into a second region of the chamber, the second region being vertically offset from the first region;
• heating the first region to a first predetermined temperature and heating the second region to a second predetermined temperature;
• delivering a first precursor gas through first holes having a first size and a first shape, at a first gaseous flow rate in the first region to form a first material to a first thickness at a first deposition rate while simultaneously delivering the first precursor gas through second holes having a second size and a second shape at a second gaseous flow rate in the second region to form the first material to a second thickness different than the first thickness at a second deposition rate different than the first deposition rate, wherein the second size is different than the first size, the second shape is different than the first shape, or both the second size and second share are different than the first size and first shape, respectively;
• and
• subsequent to the step of delivering first precursor gas, delivering a second precursor gas through the first holes at a third gaseous flow rate in the first region to form a second material at a third deposition rate while simultaneously delivering the second precursor gas through the second holes at a fourth gaseous flow rate in the second region to form the second material at a fourth deposition rate different than the third deposition rate.

A method comprising:

• providing a first wafer in a first region of a chamber and providing a second wafer in a second region of the chamber, the second region being vertically offset from the first region;
• and
• forming in the first region a first film having a first thickness, and forming in the second region a second film having a second thickness different from the first thickness simultaneously with forming of the first film having the first thickness, the first film and second film having the same composition, by:
• delivering a first precursor gas through a first injector having a first gas flow path, the first gas flow path including a first hole with a first geometric parameter and a second hole with a second geometric parameter different from the first geometric parameter, the first precursor gas being delivered at a first gaseous flow rate in the first region and simultaneously being delivered at a second gaseous flow rate in the second region;
• and
• delivering a second precursor gas through a second injector having a second gas flow path, the second gas flow path including a third hole with a third geometric parameter and a fourth hole with a fourth geometric parameter different from the third geometric parameter, the second precursor gas being delivered at a third gaseous flow rate in the first region and being delivered at a fourth gaseous flow rate in the second region.