System based on low-pressure chemical vapor deposition for fabricating perovskite film from organic halide compound and metal halide compound

A system for fabricating a perovskite film, the system comprising:

• a housing for use as a furnace, the housing having a closed hollow structure elongated longitudinally,
• an inlet portion and an outlet portion on the housing, the inlet portion and the output portion being configured to input and output gases, respectively, and the inlet portion being configured to be adjusted for inputting a gas into the housing;
• a single organic halide source, the single organic halide source being provided in an evaporation unit in a first section of the housing, and the evaporation unit being configured to generate an organic halide gas from the organic halide source;
• one or more substrates provided in a second section of the housing, each of the one or more substrates being pre-deposited with a metal halide compound, the second section being downstream of the first section along a flow path of the gas in the housing;
• a first temperature control unit coupled to the first section of the housing, the first temperature control unit being configured to control a first temperature for the organic halide source;
• and
• a second temperature control unit coupled to the second section of the housing, the second temperature control unit being configured to control a second temperature for the one or more substrates pre-deposited with the metal halide compound,
• wherein the evaporation unit is configured to generate the organic halide gas by evaporating the organic halide source at the first temperature without a chemical reaction between the organic halide source and the gas inputted into the housing.