C30B 31/18
Controlling or regulating
C30B31/18 (Controlling or regulating) appears on 54 US grants and 30 published applications in this corpus.
Search patents in C30B- Granted patents
- 54
- Published applications
- 30
- Assignees
- 38
- Inventors
- 139
- Latest grant
- 23 Sep 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 2 | 0 |
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 2 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 2 | 0 |
| 1991 | 0 | 0 |
| 1992 | 2 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 1 | 0 |
| 1997 | 2 | 0 |
| 1998 | 5 | 0 |
| 1999 | 0 | 0 |
| 2000 | 4 | 0 |
| 2001 | 5 | 1 |
| 2002 | 5 | 5 |
| 2003 | 2 | 1 |
| 2004 | 3 | 0 |
| 2005 | 2 | 1 |
| 2006 | 0 | 2 |
| 2007 | 0 | 1 |
| 2008 | 0 | 0 |
| 2009 | 0 | 2 |
| 2010 | 0 | 1 |
| 2011 | 0 | 0 |
| 2012 | 2 | 1 |
| 2013 | 1 | 0 |
| 2014 | 1 | 0 |
| 2015 | 0 | 1 |
| 2016 | 0 | 0 |
| 2017 | 1 | 2 |
| 2018 | 0 | 0 |
| 2019 | 0 | 0 |
| 2020 | 0 | 1 |
| 2021 | 0 | 2 |
| 2022 | 1 | 1 |
| 2023 | 1 | 1 |
| 2024 | 1 | 2 |
| 2025 | 3 | 2 |
| 2026 | 0 | 3 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Structures with boron- and gallium-doped silicon germanium layers and methods and systems for forming same23 Sep 2025US 12,421,620 B2ASM IP Holding B. V.
- Method for manufacturing substrate for solar cell and substrate for solar cell9 Sep 2025US 12,414,401 B2Shin-Etsu Chemical Co., Ltd.
- Method for manufacturing substrate for solar cell and substrate for solar cell25 Feb 2025US 12,237,435 B2Shin-Etsu Chemical Co., Ltd.
- Method for manufacturing substrate for solar cell and substrate for solar cell13 Feb 2024US 11,901,475 B2Shin-Etsu Chemical Co., Ltd.
- Method for depositing low temperature phosphorous-doped silicon10 Oct 2023US 11,781,243 B2ASM IP Holding B. V.
- Method of manufacturing nitrogen-doped silicon substrate25 Jun 2026US 2026/0182273 A1Samsung Electronics Co., Ltd.
- Gan crystal and method for producing gan crystal18 Jun 2026US 2026/0168134 A1Mitsubishi Chemical Corporation
- Methods for selectively depositing a boron doped silicon germanium layer on a surface of a substrate5 Feb 2026US 2026/0035835 A1ASM IP Holding B. V.
- Solar cell and preparation method therefor and application thereof17 Apr 2025US 2025/0126923 A1Tongwei Solar (Chengdu) Co., Ltd.
- Method for doping carbon in thin film on wafer13 Feb 2025US 2025/0054771 A1
Most cited
By later US patents
- Temperature control system for a thermal reactor499US 6,441,350 B1Brooks Automation, Inc. · 2002
- Apparatus for heat treating substrates capable of quick cooling354US 4,925,388 ADainippon Screen Mfg.Co., Ltd. · 1990
- Rapid thermal heating apparatus and method220US 5,155,336 AAPPLIED Materials.Inc. · 1992
- Rapid thermal heating apparatus and control therefor106US 5,689,614 AAPPLIED Materials.Inc. · 1997
- Rapid thermal heating apparatus and method utilizing plurality of light pipes78US 5,487,127 AAPPLIED Materials.Inc. · 1996