Method for depositing low temperature phosphorous-doped silicon

A method for selectively growing an epitaxial phosphorous-doped silicon layer comprising the steps:

• providing a substrate in a reactor chamber, the substrate comprising a first surface and a second surface, wherein the first surface is a monocrystalline silicon surface;
• and,
• selectively growing a phosphorous-doped epitaxial silicon layer on the monocrystalline silicon surface by cyclically performing the following sequence of sub steps i. and ii. while maintaining the reaction chamber at a temperature of at least 350.0° C. to at most 450.0° C. and at a pressure of at least 10,600 Pa:
• i. epitaxially growing a phosphorous doped silicon layer on the monocrystalline silicon surface and growing a phosphorous doped amorphous silicon layer on the second surface by introducing a gas mixture consisting essentially of disilane, phosphine, and a carrier gas into the reactor chamber;
• and,
• ii. etching the epitaxial phosphorous doped silicon layer and etching the phosphorous doped amorphous silicon layer on the second surface by introducing an etchant into the reactor chamber;
• wherein the sequence of sub steps i. and ii. is repeated until the epitaxial phosphorous doped silicon layer on the monocrystalline silicon surface has reached a pre-determined thickness, and wherein the carrier gas consists of nitrogen and/or one or more noble gasses;
• and
• wherein the phosphorous doped silicon layer is grown by a chemical vapor deposition process, in which the disilane and the phosphine react and/or decompose on a substrate surface to produce the phosphorous-doped silicon layer.