Method for manufacturing substrate for solar cell and substrate for solar cell

A method for manufacturing a solar cell, comprising:

• preparing a Czochralski silicon single crystal ingot doped with a p-type dopant or an n-type dopant and containing oxygen atoms of at least 12 ppm;
• preparing a silicon substrate from the Czochralski silicon single crystal ingot;
• subjecting the silicon substrate to low temperature thermal treatment at a temperature of 800° C. or more and less than 1200° C. so as to fabricate a solar cell,
• wherein either the Czochralski silicon single crystal ingot, or the silicon substrate, is subjected to, before the low temperature thermal treatment, high temperature thermal treatment at a temperature of more than 1200° C. for 5 minutes or more and 30 minutes or less, so that oxide precipitate nuclei are dissolved and a homogenous solid solution of oxide precipitate nuclei is formed throughout the silicon substrate;
• subjecting the silicon substrate to texture etching before the high temperature thermal treatment;
• and
• subjecting the fabricated solar cell to an electroluminescence image test to check that spiral oxygen-induced defect patterns are not observed;
• wherein the conversion efficiency of the solar cell in which the spiral oxygen-induced defect patterns are not observed in the electroluminescence image test is about 20% and the variation thereof is about 0.1%.