C30B 25/165
The flow of the reactive gases
Official title: {the flow of the reactive gases}
C30B25/165 (The flow of the reactive gases) appears on 299 US grants and 443 published applications in this corpus.
Search patents in C30B- Granted patents
- 299
- Published applications
- 443
- Assignees
- 204
- Inventors
- 938
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 1 | 0 |
| 1984 | 2 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 2 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 1 | 2 |
| 2002 | 1 | 1 |
| 2003 | 2 | 4 |
| 2004 | 2 | 4 |
| 2005 | 3 | 3 |
| 2006 | 3 | 3 |
| 2007 | 2 | 12 |
| 2008 | 2 | 6 |
| 2009 | 2 | 11 |
| 2010 | 5 | 15 |
| 2011 | 4 | 8 |
| 2012 | 2 | 14 |
| 2013 | 8 | 12 |
| 2014 | 17 | 19 |
| 2015 | 10 | 27 |
| 2016 | 15 | 24 |
| 2017 | 19 | 22 |
| 2018 | 26 | 28 |
| 2019 | 26 | 20 |
| 2020 | 11 | 22 |
| 2021 | 18 | 38 |
| 2022 | 13 | 25 |
| 2023 | 20 | 32 |
| 2024 | 25 | 33 |
| 2025 | 27 | 30 |
| 2026 | 22 | 28 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Metal organic chemical vapor deposition of semi-insulating extrinsically carbon-doped group III-nitride films6 Oct 2026US 12,753,526 B2Wisconsin Alumni Research Foundation
- Superconducting compounds and methods for making the same8 Sep 2026US 12,733,409 B2Quantum Designed Materials Ltd.
- Growth method and structure of LED epitaxy1 Sep 2026US 12,727,286 B2Focus Lightings Tech (Suqian) Co., Ltd.
- Semiconductor structure and manufacturing method thereof28 Jul 2026US 12,692,622 B2Hon Young Semiconductor Corporation
- Methods of forming superlattice structures using nanoparticles14 Jul 2026US 12,685,041 B2ASM IP Holding B. V.
- Buffer structures for mitigation of defects at device interfaces and methods for preparing the same27 Aug 2026US 2026/0255891 A1Nanotronics Imaging, Inc.
- Diamond wafer fabrication by heteroepitaxy deposition20 Aug 2026US 2026/0242978 A1
- Sic volumetric shapes and methods of forming boules30 Jul 2026US 2026/0217543 A1Pallidus, Inc.
- Gallium nitride crystal substrate and method for manufacturing gallium nitride crystal substrate30 Jul 2026US 2026/0218412 A1Sumitomo Chemical Company, Limited
- Gallium nitride crystal substrate and method for manufacturing gallium nitride crystal substrate30 Jul 2026US 2026/0218415 A1Sumitomo Chemical Company, Limited
Most cited
By later US patents
- Atomic layer deposition of hafnium-based high-k dielectric560US 7,205,247 B2Aviza Technology, Inc. · 2007
- Vapor-phase process apparatus, vapor-phase process method, and substrate474US 8,349,083 B2Sumitomo Electric Industries, Ltd. · 2013
- Ellipsometric control of material growth168US 5,091,320 ABell Communications Research, Inc. · 1992
- Method and apparatus for monitoring surface layer growth105US 4,945,254 AThe Secretary of State for Defence in Her Britannic Majesty's Government for the United Kingdom of Great Britain and Northern Ireland · 1990
- Apparatus for fabrication of thin films66US 6,562,140 B1ASM Microchemistry Oy · 2003