Vapor-phase process apparatus, vapor-phase process method, and substrate

A vapor-phase process apparatus, comprising:

• a process chamber in which a reaction gas flows;
• a plurality of gas introduction portions formed in a wall surface of said process chamber along a direction of flow of said reaction gas;
• and
• a gas supply portion capable of supplying a gas into said process chamber at a different flow rate from each of one gas introduction portion and another gas introduction portion different from said one gas introduction portion among said plurality of gas introduction portions, wherein
• a plurality of said gas introduction portions are formed in the wall surface of said process chamber also in a direction of width intersecting the direction of flow of said reaction gas, and
• said gas supply portion can supply said gas into said process chamber at a different flow rate from each of one gas introduction portion and an additional gas introduction portion formed at a position different from that of said one gas introduction portion in said direction of width among the plurality of gas introduction portions formed in said wall surface in said direction of width,
• the vapor-phase process apparatus further comprising a susceptor carrying a process object arranged in said process chamber, wherein
• said plurality of gas introduction portions include said one gas introduction portion, said another gas introduction portion, and yet another gas introduction portion formed along the direction of flow of said reaction gas,
• said gas supply portion can supply the gas into said process chamber at a different flow rate from each of said one gas introduction portion, said another gas introduction portion, and said yet another gas introduction portion,
• a first boundary portion between said one gas introduction portion and said another gas introduction portion in the direction of flow of said reaction gas is arranged to include a position serving as an inflection point in the direction of flow of said reaction gas, of a process rate when a vapor-phase process with said reaction gas is performed while said gas is not supplied into said process chamber from said plurality of gas introduction portions, and
• a second boundary portion between said one gas introduction portion and said yet another gas introduction portion in the direction of flow of said reaction gas is arranged at a position between an upstream side end portion of said susceptor in the direction of flow of said reaction gas and said first boundary portion,
• wherein a gas supplied by the gas supply portion into the process chamber is a purge gas, and
• the inflection point is the position serving as the boundary between the upstream region and the downstream region different in the rate of change in the process rate.