Gallium nitride crystal substrate and method for manufacturing gallium nitride crystal substrate

Abstract

There is provided a gallium nitride crystal substrate, the gallium nitride crystal substrate having a diameter of 50 mm or more, and having a main surface whose closest low-index crystal plane is (0001), wherein an impurity element most abundant in the gallium nitride crystal substrate is carbon, and the a gallium nitride crystal substrate satisfies formula (1): 0.8≤ρo/ρc≤1.2 . . . (1), wherein ρc is a resistivity of the gallium nitride crystal substrate measured at a temperature of 20° C. at a center of the main surface, and ρo is a resistivity of the gallium nitride crystal substrate measured at a temperature of 20° C. at a point 10 mm inward from an outer periphery of the main surface.

Dependencies are inferred from the claim text.