C30B 19/00
Liquid-phase epitaxial-layer growth
C30B19/00 (Liquid-phase epitaxial-layer growth) appears on 725 US grants and 595 published applications in this corpus.
Search patents in C30B- Granted patents
- 725
- Published applications
- 595
- Assignees
- 307
- Inventors
- 1,259
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 19 | 0 |
| 1977 | 19 | 0 |
| 1978 | 16 | 0 |
| 1979 | 7 | 0 |
| 1980 | 11 | 0 |
| 1981 | 26 | 0 |
| 1982 | 18 | 0 |
| 1983 | 18 | 0 |
| 1984 | 8 | 0 |
| 1985 | 16 | 0 |
| 1986 | 25 | 0 |
| 1987 | 10 | 0 |
| 1988 | 12 | 0 |
| 1989 | 7 | 0 |
| 1990 | 6 | 0 |
| 1991 | 11 | 0 |
| 1992 | 4 | 0 |
| 1993 | 8 | 0 |
| 1994 | 13 | 0 |
| 1995 | 4 | 0 |
| 1996 | 12 | 0 |
| 1997 | 8 | 0 |
| 1998 | 5 | 0 |
| 1999 | 4 | 0 |
| 2000 | 3 | 0 |
| 2001 | 7 | 3 |
| 2002 | 7 | 10 |
| 2003 | 5 | 15 |
| 2004 | 7 | 17 |
| 2005 | 9 | 10 |
| 2006 | 8 | 12 |
| 2007 | 13 | 20 |
| 2008 | 11 | 12 |
| 2009 | 12 | 23 |
| 2010 | 11 | 29 |
| 2011 | 15 | 25 |
| 2012 | 17 | 23 |
| 2013 | 22 | 44 |
| 2014 | 16 | 34 |
| 2015 | 28 | 44 |
| 2016 | 30 | 50 |
| 2017 | 39 | 53 |
| 2018 | 44 | 39 |
| 2019 | 43 | 20 |
| 2020 | 28 | 21 |
| 2021 | 13 | 8 |
| 2022 | 14 | 10 |
| 2023 | 7 | 22 |
| 2024 | 9 | 18 |
| 2025 | 11 | 16 |
| 2026 | 9 | 17 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Group-III element nitride semiconductor substrate25 Aug 2026US 12,721,056 B2NGK Insulators, Ltd.
- Treatment solution and treatment method26 May 2026US 12,637,760 B2Kabushiki Kaisha Toshiba
- Electro-formed metal foils19 May 2026US 12,635,422 B2American Superconductor Corporation
- Growth method of high-temperature phase lanthanum borosilicate crystal and use21 Apr 2026US 12,606,932 B2Fuzhou University
- Group III nitride crystal, group III nitride semiconductor, group III nitride substrate, and method for producing group III nitride crystal21 Apr 2026US 12,606,934 B2Panasonic Intellectual Property Management Co., Ltd.
- Metal-organic frameworks/transition metal dichalcogenides van der waals heterostructures for ultra strong microwave absorption8 Oct 2026US 2026/0308802 A1City University of Hong Kong
- Silicon carbide epitaxial substrate and method of manufacturing the same1 Oct 2026US 2026/0297799 A1
- Electro-formed metal foils10 Sep 2026US 2026/0271625 A1American Superconductor Corporation
- Beta-digallium trioxide single crystal substrate, method for manufacturing beta-digallium trioxide single crystal, and method for manufacturing beta-digallium trioxide single crystal substrate13 Aug 2026US 2026/0234833 A1Sumitomo Electric Industries, Ltd.
- Structure of group iii nitride seed crystal substrate and method for producing group iii nitride crystal25 Jun 2026US 2026/0176792 A1Panasonic Holdings Corporation
Most cited
By later US patents
- Low temperature method of preparing GaN single crystals146US 5,868,837 ACornell Research Foundation, Inc. · 1999
- Systems and methods for additive manufacturing and repair of metal components114US 9,522,426 B2Georgia Tech Research Corporation · 2016
- Method of producing semiconductor member and method of producing solar cell99US 6,190,937 B1Canon Kabushiki Kaisha · 2001
- Method of fabricating nitride crystal, mixture, liquid phase growth method, nitride crystal, nitride crystal powders, and vapor phase growth method99US 6,270,569 B1Hitachi Cable, Ltd. · 2001
- Method of making semiconductor superlattices free of misfit dislocations90US 4,088,515 AInternational Business Machines Corporation · 1978