C30B 19/06
Reaction chambers
Official title: Reaction chambers; Boats for supporting the melt; Substrate holders
C30B19/06 (Reaction chambers) appears on 208 US grants and 140 published applications in this corpus.
Search patents in C30B- Granted patents
- 208
- Published applications
- 140
- Assignees
- 115
- Inventors
- 408
- Latest grant
- 21 Apr 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 10 | 0 |
| 1977 | 11 | 0 |
| 1978 | 6 | 0 |
| 1979 | 4 | 0 |
| 1980 | 6 | 0 |
| 1981 | 11 | 0 |
| 1982 | 9 | 0 |
| 1983 | 5 | 0 |
| 1984 | 4 | 0 |
| 1985 | 4 | 0 |
| 1986 | 6 | 0 |
| 1987 | 4 | 0 |
| 1988 | 7 | 0 |
| 1989 | 2 | 0 |
| 1990 | 2 | 0 |
| 1991 | 3 | 0 |
| 1992 | 2 | 0 |
| 1993 | 3 | 0 |
| 1994 | 3 | 0 |
| 1995 | 0 | 0 |
| 1996 | 3 | 0 |
| 1997 | 1 | 0 |
| 1998 | 2 | 0 |
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 3 | 0 |
| 2002 | 2 | 6 |
| 2003 | 3 | 4 |
| 2004 | 2 | 1 |
| 2005 | 2 | 2 |
| 2006 | 3 | 1 |
| 2007 | 2 | 4 |
| 2008 | 3 | 2 |
| 2009 | 2 | 4 |
| 2010 | 1 | 9 |
| 2011 | 2 | 6 |
| 2012 | 5 | 11 |
| 2013 | 11 | 8 |
| 2014 | 4 | 9 |
| 2015 | 7 | 15 |
| 2016 | 6 | 18 |
| 2017 | 12 | 15 |
| 2018 | 8 | 4 |
| 2019 | 11 | 2 |
| 2020 | 2 | 5 |
| 2021 | 0 | 0 |
| 2022 | 5 | 0 |
| 2023 | 0 | 2 |
| 2024 | 1 | 1 |
| 2025 | 1 | 6 |
| 2026 | 1 | 5 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Growth method of high-temperature phase lanthanum borosilicate crystal and use21 Apr 2026US 12,606,932 B2Fuzhou University
- Single-crystal silicon carbide wafer, single-crystal silicon carbide ingot, and method for producing single-crystal silicon carbide10 Jun 2025US 12,325,935 B2Central Glass Company, Limited
- Silicon based melting composition and manufacturing method for silicon carbide single crystal using the same16 Jan 2024US 11,873,576 B2LG Chem, Ltd.
- Method for growth of a merged crystal by bonding at least a first and second crystal to an adhesion layer to form a tiled substrate and growing a crystalline composition over said tiled substrate27 Sep 2022US 11,453,956 B2SLT Technologies, Inc.
- SiC crucible, SiC sintered body, and method of producing SiC single crystal13 Sep 2022US 11,440,849 B2Shin-Etsu Chemical Co., Ltd.
- Beta-digallium trioxide single crystal substrate, method for manufacturing beta-digallium trioxide single crystal, and method for manufacturing beta-digallium trioxide single crystal substrate13 Aug 2026US 2026/0234833 A1Sumitomo Electric Industries, Ltd.
- Method for preparing 3c-sic single crystal11 Jun 2026US 2026/0159989 A1Institute of Physics, Chinese Academy of Sciences
- Sic single crystal substrate, method of manufacturing sic single crystal, and apparatus of manufacturing sic single crystal14 May 2026US 2026/0132544 A1
- Method for manufacturing group iii nitride semiconductor2 Apr 2026US 2026/0092394 A1The University of Osaka
- Method of growing group iii nitride single crystal, jig for use in growing group iii nitride single crystal, and apparatus for manufacturing group iii nitride single crystal19 Mar 2026US 2026/0078523 A1Toyoda Gosei Co., Ltd.
Most cited
By later US patents
- Heterostructure devices, a light guiding layer having contiguous zones of different thickness and bandgap and method of making same34US 3,993,963 ABell Telephone Laboratories, Incorporated · 1976
- Liquid-phase growth method, liquid-phase growth apparatus, and solar cell27US 6,566,277 B1Canon Kabushiki Kaisha · 2003
- Method of growing multiple monocrystalline layers26US 4,022,652 ATokyo Shibaura Electric Co., Ltd. · 1977
- Method for producing semiconductor thin films on moving substrates25US 6,551,908 B2Canon Kabushiki Kaisha · 2003
- Method and apparatus for production of liquid phase epitaxial layers of semiconductors22US 3,933,538 ASumitomo Electric Industries, Ltd. · 1976