Liquid-phase growth method, liquid-phase growth apparatus, and solar cell

Abstract

The present invention provides a method for producing a semiconductor substrate which comprises the steps of growing a first semiconductor layer on a substrate in liquid phase at a properly controlled temperature for eliminating defects and growing a second semiconductor layer on the first semiconductor layer in liquid phase at a higher temperature; a solar cell produced by a method comprising a step of anodizing the surface of the first and second layer side of the semiconductor substrate produced by the liquid-phase growth method; a liquid-phase growth apparatus comprising means for storing a melt, means for changing the temperature of the stored melt, and means for bringing an oxygen-containing substrate into contact with the melt, wherein a substrate is brought into contact with the melt at a temperature so as to suppress the stacking faults contained in the semiconductor layer grown on the surface of the substrate.

Dependencies are inferred from the claim text.