C30B 19/061
Tipping system
Official title: {Tipping system, e.g. by rotation}
C30B19/061 (Tipping system) appears on 12 US grants and 4 published applications in this corpus.
Search patents in C30B- Granted patents
- 12
- Published applications
- 4
- Assignees
- 12
- Inventors
- 31
- Latest grant
- 23 Apr 2019
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 1 | 0 |
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 0 |
| 2010 | 0 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 1 |
| 2013 | 0 | 0 |
| 2014 | 0 | 1 |
| 2015 | 0 | 0 |
| 2016 | 0 | 0 |
| 2017 | 1 | 2 |
| 2018 | 0 | 0 |
| 2019 | 2 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Method for producing group-III nitride crystal, group-III nitride crystal, semiconductor device, and device for producing group-III nitride crystal23 Apr 2019US 10,266,965 B2Itochu Plastics Inc.
- Process for producing group III nitride crystal and apparatus for producing group III nitride crystal12 Feb 2019US 10,202,710 B2Itochu Plastics Inc.
- Method for producing SiC single crystals by control of an angle formed by the meniscus and the side face of the seed crystal and production device for the method25 Apr 2017US 9,631,295 B2Nippon Steel & Sumitomo Metal Corporation
- Apparatus for liquid-phase epitaxial growth22 Nov 1994US 5,366,552 AShin-Etsu Handotai Co., Ltd.
- Rotating furnace tube having a non-rotating slidable work holder for processing semiconductor substrates19 Oct 1993US 5,254,172 AShin-Etsu Handotai Co., Ltd.
- Method for producing group-iii nitride crystal, group-iii nitride crystal, semiconductor device, and device for producing group-iii nitride crystal16 Mar 2017US 2017/0073839 A1Itochu Plastics Inc.
- Process for producing group iii nitride crystal and apparatus for producing group iii nitride crystal16 Mar 2017US 2017/0073840 A1Itochu Plastics Inc.
- Method for producing sic single crystals and production device9 Jan 2014US 2014/0007807 A1Nippon Steel & Sumitomo Metal Corporation
- Multilayer zno single crystal scintillator and method for manfacturing the same15 Mar 2012US 2012/0064314 A1Mitsubishi Gas Chemical Company, Inc.
Most cited
By later US patents
- Ohmic contact10US 3,984,261 ARCA Corporation · 1976
- Semi-open liquid phase epitaxial growth system8US 4,315,477 ARockwell International Corporation · 1982
- Method of making a liquid phase epitaxial-layers of gallium phosphide on multiple wafers7US 3,997,377 ASony Corporation · 1976
- Rotating furnace tube having a non-rotating slidable work holder for processing semiconductor substrates5US 5,254,172 AShin-Etsu Handotai Co., Ltd. · 1993
- Liquid phase epitaxy apparatus and method4US 4,755,364 ARockwell International Corporation · 1988