MULTILAYER ZnO SINGLE CRYSTAL SCINTILLATOR AND METHOD FOR MANFACTURING THE SAME
AssigneesTohoku University, Mitsubishi Gas Chemical Company, Inc.
InventorsHideyuki Sekiwa, Jun Kobayashi, Miyuki Miyamoto, Taichi Tokutake, Akira Yoshikawa, Takayuki Yanagida
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Abstract
Provided are a multilayer ZnO single crystal scintillator wherein the light emitting quantity is increased, and a method for manufacturing such scintillator. A multilayer body composed of ZnO semiconductor layers having different band gaps is manufactured, and a layer having a small band gap is made to have a thickness that permits ionization radiation, such as α rays and electronic rays, to enter the layer, thereby the light emitting quantity of the multilayer ZnO single crystal scintillator is greatly increased.
Claims14
A multilayer ZnO single crystal scintillator which is a multilayer body comprising at least two layers of ZnO mixed crystal (Zn1-x-yMgxCdy)O having different band gaps, wherein the ZnO mixed crystal layer with a smaller band gap has an irradiation surface for ionization radiation, thickness of 5 μm to 50 μm, and 0≦x≦0.145 and 0≦x≦0.07.
A method for manufacturing a multilayer ZnO single crystal scintillator which is a multilayer body comprising at least two layers of ZnO mixed crystal (Zn1-x-yMgxCdy)O having different band gaps, wherein the ZnO mixed crystal layer with a smaller band gap has an irradiation surface for ionization radiation, thickness of 5 μm to 50 μm, and 0≦x≦0.145 and 0≦y≦0.07, wherein at least one layer of the multilayer body is produced by a liquid phase epitaxial growth method which includes directly contacting a substrate with a mixture•molten material of ZnO, MgO and CdO as a solute and PbO and Bi2O3 as a solvent to grow ZnO mixed crystal (Zn1-x-yMgxCdy)O on the substrate.
A method for manufacturing a multilayer ZnO single crystal scintillator which is a multilayer body comprising at least two layers of ZnO mixed crystal (Zn1-x-yMgxCdy)O having different band gaps, wherein the ZnO mixed crystal layer with a smaller band gap has an irradiation surface for ionization radiation, thickness of 5 μm to 50 μm, and 0≦x≦0.145 and 0≦y≦0.07 and at least one layer of the multilayer body is produced by a liquid phase epitaxial growth method which includes directly contacting a substrate with a mixture•molten material of ZnO, MgO and CdO as a solute and PbF2 and PbO as a solvent to grow ZnO mixed crystal (Zn1-x-yMgxCdy)O on the substrate.
Dependencies are inferred from the claim text.