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US 3,984,261 AGranted
Ohmic contact
AssigneeRCA Corporation
InventorFrank Zygmunt Hawrylo
Life of this patent
Estimating the term…
Abstract
A contact of an indium gallium arsenide alloy forms an ohmic contact with a body of n-type or p-type single crystal gallium arsenide of a resistivity of 1 ohm-cm or greater. The method for forming the contact utilizes a low temperature range. This low temperature range lessens the amount of surface disassociation and aids in the prevention of contamination of the body of gallium arsenide.
Claims4
An ohmic contact comprising:
- a body of single crystal, high resistivity gallium arsenide, and
- a layer of an indium gallium arsenide alloy on a surface of said body.
Dependencies are inferred from the claim text.