Method for manufacturing group iii nitride semiconductor

Abstract

A method for manufacturing a group III nitride semiconductor includes a growing step of growing the group III nitride semiconductor on a seed substrate by supplying a gas containing nitrogen to a mixed melt containing a group III metal and a flux. The seed substrate has a substrate and a plurality of seed crystals provided on the substrate and composed of the group III nitride semiconductor. In the method, the growing step includes a generation step of generating an initial nucleus composed of the group III nitride semiconductor on each seed crystal; and a growth step of growing the initial nucleus after the generation step. In the generation step, the mixed melt contains calcium.

Dependencies are inferred from the claim text.