US 11,440,849 B2 · SiC crucible, SiC sintered body, and method of producing SiC single crystal

Abstract

In the present invention, in producing a SiC single crystal in accordance with a solution method, a crucible containing SiC as a main component and having an oxygen content of 100 ppm or less is used as the crucible to be used as a container for a Si—C solution. In another embodiment, a sintered body containing SiC as a main component and having an oxygen content of 100 ppm or less is placed in the crucible to be used as a container for a Si—C solution. The SiC crucible and SiC sintered body are obtained by molding and baking a SiC raw-material powder having an oxygen content of 2000 ppm or less. SiC, which is the main component of these, serves as a source for Si and C and allows Si and C to elute into the Si—C solution by heating.

Claims9

Dependent claims

A method of producing a SiC single crystal, which is a method of growing a silicon carbide crystal in accordance with a solution method, comprising

using a crucible comprising SiC as a main component and having an oxygen content of 80 ppm or less as a container for a Si—C solution,
heating the crucible to allow Si and C to elute from a high temperature region of a crucible surface in contact with the Si—C solution, into the Si—C solution, and
bringing a SiC seed crystal from the top of the crucible into contact with the Si—C solution to allow a SiC single crystal to grow on the SiC seed crystal.

Dependencies are inferred from the claim text.

SiC crucible, SiC sintered body, and method of producing SiC single crystal

Life of this patent

SiC crucible, SiC sintered body, and method of producing SiC single crystal

Life of this patent

Abstract

Claims9