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US 4,022,652 AGranted
Method of growing multiple monocrystalline layers
AssigneeTokyo Shibaura Electric Co., Ltd.
InventorsHitoshi Hirano, Tsuguo Fukuda
Life of this patent
Estimating the term…
Abstract
A method of growing multiple monocrystalline layers from melts comprising growing a first monocrystalline layer from the first melt, and growing a second monocrystalline layer on the first monocrystalline layer from the second melt by successively contacting the first monocrystalline layer with the second melt during the growth of the first monocrystalline layer.
Claims12
A method of growing multiple monocrystalline layers from melts, comprising:
- A. contacting a seed with a first melt in a first crucible;
- B. slowly vertically withdrawing said seed from said first melt along and in contact with one side of a vertical guide means to cool and grow on said seed along said guide means a first monocrystalline layer comprised of an uncooled zone located near said first melt and a cooled zone located spaced from said first melt and formed upon cooling;
- C. successively supplying a second melt in a second crucible from a prescribed point to the cooled zone of said first monocrystalline layer as successively grown, said supplying of said second melt comprising the steps of:
- a. disposing in said second melt a liquid column forming member comprising said guide means having an upper end, a frame unit havng a projected portion extending beyond the upper end of said guide means and a first space between the other side of said guide means and said frame unit, said first space being capillary and extending from within said second melt up to the upper end of said guide means;
- b. permitting said second melt to rise through said first space up to the upper end of said guide means to form a liquid column of said second melt within said first space;
- c. withdrawing said first monocrystalline layer along said one side of said guide means beyond the upper end of said guide means thereby forming a second capillary space between the projected portion of said frame unit and the cooled zone of said first monocrystalline layer;
- and
- d. permitting said liquid column of said second melt to rise through said second space so that said second melt contacts said cooled zone of said first monocrystalline layer;
- and
- D. permitting a second monocrystalline layer to be grown on the cooled zone of said first monocrystalline layer by solidification of a portion of said second melt contacted with the cooled zone of said first monocrystalline layer.
7 more elements
A method of growing multiple monocrystalline layers from melts, comprising:
- A. contacting a seed with a first melt simultaneously at at least two points in a first crucible;
- B. slowly vertically withdrawing said seed from said first melt along the outer sides of first and second vertical guide means to cool and grow on said seed along both said guide means at least two first monocrystalline layers each comprised of an uncooled zone located near said first melt and cooled zone located spaced from said first melt and formed upon said cooling;
- C. successively supplying a second melt in a second crucible from a prescribed point to the cooled zone of each said first monocrystalline layer as successively grown, said supply of said second melt comprising:
- a. disposing in said second melt a liquid column forming member comprising said first and second guide means, the upper ends of which are flush with each other, and a first capillary space between the inner sides of said first and second guide means, said first space extending from within said second melt up to the upper ends of said first and second guide means;
- b. permitting said second melt to rise through said first space up to the upper ends of said guide means to form a liquid column of said second melt within said first space;
- c. withdrawing said first monocrystalline layers along the outer sides of said first and second guide means beyond said upper ends of said first and second guide means thereby forming a second capillary space between said cooled zones of said first monocrystalline layers;
- and
- d. permitting said liquid column of said second melt to rise through said second space so that said second melt simultaneously contacts said cooled zones of said first monocrystalline layers;
- and
- D. permitting a second monocrystalline layer to be grown on between said cooled zones of said first monocrystalline layers by solidification of a portion of said second melt simultaneously contacted with said cooled zones of said first monocrystalline layers.
7 more elements
Dependencies are inferred from the claim text.