Silicon based melting composition and manufacturing method for silicon carbide single crystal using the same

A method for manufacturing a silicon carbide single crystal, comprising:

• preparing a silicon carbide seed crystal;
• preparing a silicon-based molten composition including silicon (Si), yttrium (Y), and iron (Fe), and as expressed in Formula 1;
• forming a molten solution including the silicon-based molten composition and carbon (C);
• and
• obtaining the silicon carbide single crystal on the silicon carbide seed crystal from the surface of the molten solution:
• SiaYbFec [Formula 1]
• wherein, in Formula 1, the a is equal to or greater than 0.5 and equal to or less than 0.7, the b is equal to or greater than 0.2 and equal to or less than 0.3, and the c is equal to or greater than 0.1 and equal to or less than 0.2,
• wherein in the obtaining of the silicon carbide single crystal, a yttrium silicide is not precipitated, and
• wherein a growing speed of the silicon carbide single crystal is equal to or greater than 0.1 mm/h.