Method for preparing 3c-sic single crystal

Abstract

The present invention provides a method for preparing 3C-SiC single crystals, comprising the steps of: (1) fixing a SiC seed crystal to a graphite seed crystal holder, and then fixing the graphite seed crystal holder to a graphite lifting rod; (2) placing a flux containing Si and Al in a graphite crucible; (3) then loading the graphite crucible and the graphite lifting rod into a growth furnace; (4) vacuumizing the growth furnace, and then introducing a gas to control the gas pressure in the growth furnace and the crystal form of 3C-SiC; (5) heating the graphite crucible until the flux is completely molten to form a melt, and reaches the growth temperature of SiC, (6) pushing down the graphite lifting rod to make the SiC seed crystals contact with the melt, thereby growing 3C-SiC single crystals; wherein the flux further contains a 3d-transition metal with a melting point lower than the growth temperature of SiC. The method of the present invention can achieve the growth of high-quality, large-size (such as 2-6 inches), low-defect, single-crystal form, and uniformly doped n-type, p-type and semi-insulating 3C-SiC single crystals.

Dependencies are inferred from the claim text.