C30B 19/068
Substrate holders
Official title: {Substrate holders}
C30B19/068 (Substrate holders) appears on 40 US grants and 35 published applications in this corpus.
Search patents in C30B- Granted patents
- 40
- Published applications
- 35
- Assignees
- 29
- Inventors
- 101
- Latest grant
- 27 Sep 2022
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 3 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 2 | 0 |
| 1981 | 2 | 0 |
| 1982 | 4 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 1 | 0 |
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 1 |
| 2003 | 0 | 2 |
| 2004 | 0 | 0 |
| 2005 | 1 | 0 |
| 2006 | 1 | 1 |
| 2007 | 0 | 0 |
| 2008 | 1 | 0 |
| 2009 | 1 | 1 |
| 2010 | 0 | 0 |
| 2011 | 0 | 1 |
| 2012 | 1 | 1 |
| 2013 | 0 | 3 |
| 2014 | 1 | 3 |
| 2015 | 1 | 9 |
| 2016 | 2 | 3 |
| 2017 | 5 | 4 |
| 2018 | 4 | 0 |
| 2019 | 2 | 0 |
| 2020 | 0 | 1 |
| 2021 | 0 | 0 |
| 2022 | 1 | 0 |
| 2023 | 0 | 0 |
| 2024 | 0 | 0 |
| 2025 | 0 | 4 |
| 2026 | 0 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method for growth of a merged crystal by bonding at least a first and second crystal to an adhesion layer to form a tiled substrate and growing a crystalline composition over said tiled substrate27 Sep 2022US 11,453,956 B2SLT Technologies, Inc.
- SiC single crystal and method for producing same22 Oct 2019US 10,450,671 B2Nippon Steel & Sumitomo Metal Corporation
- Method for growth of a merged crystal by bonding at least a first and second crystal to an adhesion layer to form a tiled substrate and growing a crystalline composition over said tiled substrate3 Sep 2019US 10,400,352 B2Soraa, Inc.
- Method for producing crystal of silicon carbide, and crystal production device11 Dec 2018US 10,151,046 B2Central Glass Company, Limited
- Apparatus for producing SiC single crystal and method for producing SiC single crystal16 Oct 2018US 10,100,432 B2Toyota Jidosha Kabushiki Kaisha
- Sic single crystal substrate, method of manufacturing sic single crystal, and apparatus of manufacturing sic single crystal14 May 2026US 2026/0132544 A1
- Seed crystal holders and crystal growth methods26 Jun 2025US 2025/0207295 A1Meishan Boya Advanced Materials Co., Ltd.
- Crystal preparation apparatus and crystal preparation method13 Mar 2025US 2025/0084558 A1Meishan Boya Advanced Materials Co., Ltd.
- Connecting devices20 Feb 2025US 2025/0059673 A1Meishan Boya Advanced Materials Co., Ltd.
- Method of producing single crystal aln, single crystal aln, and single crystal aln production apparatus30 Jan 2025US 2025/0034751 A1Dowa Holdings Co., Ltd.
Most cited
By later US patents
- Method for liquid phase epitaxy multiple dipping of wafers for bubble film growth19US 4,243,472 ABurroughs Corporation · 1981
- Liquid-phase growth process and liquid-phase growth apparatus17US 6,872,248 B2Canon Kabushiki Kaisha · 2005
- Method of forming an epitaxial layer on a crystalline substrate14US 4,032,370 AInternational Audio Visual, Inc. · 1977
- Semiconductor liquid phase epitaxial growth method and apparatus, and its wafer holder11US 5,922,126 AKabushiki Kaisha Toshiba · 1999
- Method for growing epitaxial layers from the liquid phase8US 3,940,296 AU. S. Philips Corporation · 1976