Method for liquid phase epitaxy multiple dipping of wafers for bubble film growth
AssigneeBurroughs Corporation
InventorCharles F. O'Neill
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Abstract
A method for batch processing wafers by liquid phase epitaxy (LPE) dipping methods for uniformity of film thickness wafer-to-wafer and uniformity of film on each individual wafer for use in bubble (domain) memories comprising, supporting a plurality of wafers substantially horizontal on a substrate holder and lowering and immersing said wafers into the melt to be deposited as a thin film on each wafer and, while immersed, continually moving the wafers up and down as well as continually oscillating the wafers through substantially 360.degree..
Claims5
A batch process for growing films onto nonmagnetic substrates by liquid phase epitaxy comprising:
- supporting a plurality of substrates spaced apart from each other in a tilted position, above one another and above a flux material to be deposited on said substrate,
- lowering said spaced apart substrates into the flux material where said substrates assume a horizontal position as they enter said flux material,
- continually moving said substrates while in said flux in an up and down motion and oscillating motion.
A method for growing films on substrates by liquid phase epitaxy comprising:
- supporting a plurality of spaced apart, tilted substrates above a flux material,
- lowering said substrates into the flux material where each said substrate assumes a horizontal position as it enters said flux material, and
- continually moving said substrates up and down and oscillating said spaced apart horizontal substrates while in said flux.
The process for growing films on substrates by liquid phase epitaxy comprising:
- supporting at least one substrate in a tilted position above a flux material to be deposited on said at least one substrate,
- lowering said at least one substrate into the flux material and allowing said at least one substrate to assume a horizontal position as said at least one substrate enters said flux material,
- continually moving said at least one substrate up and down and in an oscillating movement while in said flux, and
- tilting said at least one substrate to its original position when removing said at least one substrate from the flux.
Dependencies are inferred from the claim text.