Method for growing epitaxial layers from the liquid phase

Method of providing a semiconductor material layer on a substrate, comprising the steps of:

• a. providing a substrate holder comprising a recess for retaining a substrate and a reservoir defining member, said substrate holder defining at certain times the lower side of said reservoir;
• b. providing a semiconductor material in said reservoir;
• c. providing in said recess said substrate that comprises a flat surface;
• d. moving at least one of said reservoir defining member and said substrate holder with respect to the other so as to locate said substrate surface at said reservoir;
• e. depositing said semiconductor material on said surface while said substrate surface is located at said reservoir;
• f. moving said substrate vertically with respect to said reservoir at least after said semiconductor material depositing step and while said substrate is disposed at said reservoir;
• and
• g. laterally moving said substrate to a point removed from said reservor, whereby said vertical and lateral movements of said substrate permit excess said semiconductor material to be removed from said layer by said reservoir defining member.