SiC single crystal and method for producing same

A method for producing a SiC single crystal in which a SiC seed crystal substrate having a {0001} face,

• the SiC seed crystal substrate being held on a center portion of a seed crystal holding shaft, the seed crystal holding shaft including the center portion and a side portion that surrounds the center portion, the side portion having alternating recesses and raised sections, is contacted with a Si—C solution in a crucible,
• the Si—C solution having a temperature gradient such that a temperature of the Si—C solution decreases from an interior of the Si—C solution toward a surface of the Si—C solution, to grow the SiC single crystal from the {0001} face of the SiC seed crystal substrate in a <11-20> direction and <1-100> direction and form a grown SiC single crystal, wherein the method comprises:
• growing the SiC single crystal from the {0001} face of the SiC seed crystal substrate to a length of 2 mm or greater in the growth direction to form the grown SiC single crystal, and
• prior to growing the SiC single crystal, configuring the seed crystal substrate and the seed crystal holding shaft to reduce heat loss from the <11-20> direction to be lower than heat loss from the <1-100> direction by bonding a top face of the seed crystal substrate to the center portion of the seed crystal holding shaft so that
• the <1-100> direction of the seed crystal substrate is oriented to coincide with the recesses of the seed crystal holding shaft, and
• the <11-20> direction of the seed crystal substrate is oriented to coincide with the raised sections of the seed crystal holding shaft;
• wherein
• a ratio S/C of a diameter S of the SiC seed crystal substrate to an inner diameter C of the crucible satisfies a relationship 0.50≤S/C<1.0.