Method for producing crystal of silicon carbide, and crystal production device
AssigneesNational University Corporation Nagoya University, Central Glass Company, Limited
InventorsToru Ujihara, Shunta Harada, Daiki Koike, Tomonori Umezaki
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Abstract
Provided is a method that allows growing a single crystal of silicon carbide on an off-substrate of silicon carbide while suppressing surface roughening. The method for producing a crystal of silicon carbide includes rotating a seed crystal of silicon carbide while bringing the seed crystal into contact with a starting material solution containing silicon and carbon. A crystal growth surface of the seed crystal has an off-angle, and the position of a rotation center of the seed crystal lies downstream of the central position of the seed crystal in a step flow direction that is a formation direction of the off-angle.
Claims9
A method for producing a crystal of silicon carbide, the method comprising rotating a seed crystal of silicon carbide while bringing the seed crystal into contact with a starting material solution containing silicon and carbon,
- wherein a crystal growth surface of the seed crystal has an off-angle,
- the position of a rotation center of the seed crystal lies downstream of the central position of the seed crystal in a step flow direction that is a formation direction of the off-angle, and
- rotation of the seed crystal includes periodic repeating of forward rotation and reverse rotation.
A method for producing a crystal of silicon carbide, the method comprising bringing a seed crystal of silicon carbide into contact with a starting material solution containing silicon and carbon and held within a vessel,
- wherein a crystal growth surface of the seed crystal has an off-angle,
- the vessel rotates in such a manner that the position of a rotation center thereof lies downstream of the central position of the seed crystal in a step flow direction that is a formation direction of the off-angle, and
- rotation of the vessel includes periodic repeating of forward rotation and reverse rotation.
Dependencies are inferred from the claim text.