US 10,100,432 B2 · Apparatus for producing SiC single crystal and method for producing SiC single crystal

Abstract

An apparatus (10) for producing an SiC single crystal is used in the solution growth includes a seed shaft (28) and a crucible (14). The seed shaft (28) has a lower end surface (28S) to which an SiC seed crystal (32) is to be attached. The crucible (14) holds an Si—C solution (15). The seed shaft (28) includes a cylinder part (28A), a bottom part (28B), and a low heat conductive member (28C). The bottom part (28B) is located at the lower end of the cylinder part (28A) and has the lower end surface (28S). The low heat conductive member (28C) is arranged on the upper surface of the bottom part (28B) and has a thermal conductivity lower than that of the bottom part (28B). This production apparatus can make the temperature within the crystal growth surface of the SiC seed crystal less liable to vary.

Claims13

Dependent claims

An apparatus for producing an SiC single crystal, which is used in a solution growth method, comprising:

a seed shaft having a hollow structure and having a lower end surface to which an SiC seed crystal is to be attached;
and
a crucible for holding an Si—C solution, wherein
the seed shaft comprises:
a cylinder part;
a bottom part which is located at a lower end of the cylinder part so as to close the lower end of the cylinder part and has the lower end surface;
and
a low heat conductive member which is arranged on an upper surface of the bottom part within the seed shaft and has a thermal conductivity lower than that of the bottom part.

5 more elements

Dependencies are inferred from the claim text.

Facts

Application

14/411,942Filed 10 Jul 2013

Priority

JP 2012-16018819 Jul 2012

Published

US 2015/0152569 A14 Jun 2015

Granted

16 Oct 2018

Term ends

Not estimatedThe source records don’t support an estimate.

Classification9 codes

C30B 15/32
Single-crystal growth by pulling from a melt, e.g. Czochralski method: seed holders, e.g. chucks
C30B 9/06
By cooling of the solution: using as solvent a component of the crystal composition
C30B 15/30
Single-crystal growth by pulling from a melt, e.g. Czochralski method: mechanisms for rotating or moving either the melt or the crystal
C30B 19/068
Reaction chambers; Boats for supporting the melt; Substrate holders: substrate holders

Apparatus for producing SiC single crystal and method for producing SiC single crystal

Life of this patent

Apparatus for producing SiC single crystal and method for producing SiC single crystal

Life of this patent

Abstract

Claims13