Semiconductor liquid phase epitaxial growth method and apparatus, and its wafer holder

A holder body, comprising at least two sets of:

• a holder plate having a disk-shaped wafer holding plate formed with a U-shaped or half-circular groove portion formed so as to enclose a peripheral portion of the disk-shaped wafer holding plate except an opening surface of the wafer holding plate, a least one pair of semiconductor wafers being fitted to the groove portion in such a way that two reverse surfaces of the two semiconductor wafers are brought into contact with both surfaces of the wafer holding plate, respectively in back-to-back arrangement;
• and
• a holder cover formed with a U-shaped or half-circular groove portion so as to be fitted to the outer peripheries of the semiconductor wafers and to cover the opening surface of the wafer holding plate, the outer edges of the semiconductor wafers held by the wafer holding plate being further held by the groove portion of the holder cover;
• and
• wherein when the holder plates and the holder covers are stacked upon each other, two right surfaces of the two semiconductor wafers being opposed to each other two by two with a predetermined space between the two.

A holder body, comprising at least two sets of:

• a holder plate having a wafer holding plate formed with a U-shaped or half-circular groove portion formed so as to enclose a peripheral portion of the wafer holding plate except an opening surface of the wafer holding plate, an outer edge of the semiconductor wafer being fitted to the groove portion in such a way that a reverse surface of one semiconductor wafer is brought into contact with an inner bottom surface of the wafer holding plate;
• and
• a holder cover formed with a U-shaped or half-circular groove portion so as to be fitted to the outer periphery of the semiconductor wafer and to cover the opening surface of the wafer holding plate, the outer edge of the semiconductor wafer held by the wafer holding plate being further held by the groove portion of the holder cover;
• and
• wherein another holder plate is mounted on an upper surface of a set of the holder plate and the holder cover for holding a single semiconductor wafer in such a way that another semiconductor wafer can be sandwiched between the two holder plates, two right surfaces of the two semiconductor wafers being opposed to each other two by two with a predetermined space between the two.

An epitaxial growth apparatus, comprising:

• a source sump for accommodating a source used for liquid phase epitaxial growth;
• an epitaxial growth chamber located under the source sump, for accommodating semiconductor wafers;
• a source passage provided between the source sump and the epitaxial growth chamber;
• and
• a front chamber disposed in a part of the source passage, and
• wherein when the source accommodated in the source sump is introduced into the epitaxial growth chamber through the source passage, the source is stirred in the front chamber.

An epitaxial growth apparatus, comprising:

• a source sump for accommodating sources of at least two sorts each used for liquid phase epitaxial growth, separately;
• an epitaxial growth chamber located under the source sump, for accommodating semiconductor wafers;
• and
• a source passage disposed between the source sump and the epitaxial growth chamber connected to a bottom portion of the epitaxial growth chamber, separately for each source.

An epitaxial growth apparatus, comprising:

• a source sump for accommodating a source used for liquid phase epitaxial growth;
• a wafer holder for holding semiconductor wafers, including:
• a holder body formed with:
• a wafer accommodating space in which at least one pair of semiconductor wafers can be held in such a way that reverse surfaces of the two wafers are brought into contact with an inner side wall thereof and further right surfaces of the two wafers are opposed to each other with a predetermined space between the two;
• and
• an inlet and outlet port for injecting and exhausting the source into and out of the wafer accommodating space, or an inlet port for injecting the source into the wafer accommodating space and an outlet port for exhausting the source out of the wafer accommodating space;
• and
• a wafer holder cover for covering an opening surface of the holder body;
• an epitaxial growth chamber located under the source sump, for accommodating the semiconductor wafers held by the wafer holder;
• a source passage disposed between the source sump and the epitaxial growth chamber;
• a front chamber disposed in a part of the source passage;
• and
• wherein when the source accommodated in the source sump is introduced into the epitaxial growth chamber through the source passage, the source is stirred in the front chamber.

A semiconductor liquid phase epitaxial growth apparatus, comprising:

• a heating furnace having:
• a high temperature uniform-heat section heated by heating means so as to form a roughly uniform temperature distribution, and
• a low temperature section located over the high temperature uniform-heat section and kept at a temperature lower than that of the high temperature uniform-heat section;
• gas supplying means for supplying a reducing gas and/or an inert gas into the heating furnace;
• a source sump disposed at the high temperature uniform-heat section in the heating furnace, for accommodating a source in which a solute containing semiconductor material used for epitaxial growth is dissolved in a solvent containing a metal;
• a wafer holder for holding a plurality of semiconductor wafers;
• wafer holder moving means for moving the wafer holder in vertical direction in the heating furnace, to dip the semiconductor wafers held by the wafer holder into the source accommodated in the source sump during epitaxial growth;
• stirring means having a stirring blade for stirring the source accommodated in the source sump;
• and
• blade moving means for moving the stirring means in the vertical direction to put the stirring means into or out of the source.

A semiconductor liquid phase epitaxial growth apparatus, comprising:

• a heating furnace having:
• a high temperature uniform-heat section heated by heating means so as to form a roughly uniform temperature distribution, and
• a low temperature section located over the high temperature uniform-heat section and kept at a temperature lower than that of the high temperature uniform-heat section;
• gas supplying means for supplying a reducing gas and/or an inert gas into the heating furnace;
• a source sump disposed at the high temperature uniform-heat section in the heating furnace, for accommodating a source in which a solute containing semiconductor material used for epitaxial growth is dissolved in a solvent containing a metal;
• a wafer holder for holding semiconductor wafers, including:
• a holder body formed with:
• a wafer accommodating space in which at least one pair of semiconductor wafers can be held in such a way that reverse surfaces of the two wafers are brought into contact with an inner side wall thereof and further right surfaces of the two wafers are opposed to each other with a predetermined space between the two;
• and
• an inlet and outlet port for injecting and exhausting the source into and out of the wafer accommodating space, or an inlet port for injecting the source into the wafer accommodating space and an outlet port for exhausting the source out of the wafer accommodating space;
• and
• a wafer holder cover for covering an opening surface of the holder body;
• wafer holder moving means for moving the wafer holder in vertical direction in the heating furnace, to dip the semiconductor wafers held by the wafer holder into the source accommodated in the source sump during epitaxial growth;
• stirring means having a stirring blade for stirring the source accommodated in the source sump;
• and
• blade moving means for moving the stirring means in the vertical direction to put the stirring means into or out of the source.

A semiconductor liquid phase epitaxial growth method comprising:

• a step of holding a plurality of semiconductor wafers by a wafer holder;
• a step of holding the wafer holder for holding the semiconductor wafers, in a low temperature region of a heating furnace having a high temperature uniform-heat region heated by heating means to form a roughly uniform temperature distribution and the low temperature region located over the high temperature uniform-heat region and kept at a temperature lower than that of the high temperature uniform-heat region;
• a step of flowing a reducing gas and/or an inert gas into the heating furnace;
• a step of heating the heating furnace by the heating means so that the high temperature uniform-heat region becomes a predetermined temperature;
• a step of stirring a source accommodated in a source sump, in which a solute containing a semiconductor material used for epitaxial growth is dissolved in a solvent containing metal, using a stirring means;
• a step of moving the wafer holder downward from the low temperature region to the high temperature uniform-heat region, to raise temperature of the wafer holder and the semiconductor wafers to the predetermined temperature;
• a step of moving the wafer holder and the semiconductor wafers downward, to dip the wafer holder and the semiconductor wafers into the source accommodated in the source sump;
• a step of lowering temperature of the high temperature uniform-heat region for epitaxial growth on the semiconductor wafers;
• and
• a step of pulling the wafer holder out of the source to complete the epitaxial growth.

A semiconductor liquid phase epitaxial growth method comprising:

• a step of holding a plurality of semiconductor wafers by a wafer holder;
• a step of holding the wafer holder for holding the semiconductor wafers, in a low temperature region of a heating furnace having a high temperature uniform-heat region heated by heating means to form a roughly uniform temperature distribution and the low temperature region located over the high temperature uniform-heat region and kept at a temperature lower than that of the high temperature uniform-heat region;
• a step of flowing a reducing gas and/or an inert gas into the heating furnace;
• a step of heating the heating furnace by the heating means so that the high temperature uniform-heat region becomes a predetermined temperature;
• a step of stirring a first source being put in a first source sump, a first source and a second source being put in a first source sump and a second source sump, separately in the high temperature uniform-heat region of the heating furnace, using a stirring means;
• a step of moving the wafer holder downward from the low temperature region to the high temperature uniform-heat region, to raise temperature of the wafer holder and the semiconductor wafers to a predetermined temperature;
• a step of moving the wafer holder and the semiconductor wafers downward into the first source;
• a step of lowering temperature of the high temperature uniform-heat region, to form a first epitaxial growth layer on the semiconductor wafers;
• a step of pulling the wafer holder out of the first source, to complete the first epitaxial growth;
• a step of stirring the second source in the second source sump using the stirring means;
• a step of moving the wafer holder and the semiconductor wafers downward into the second source;
• a step of lowering temperature of the high temperature uniform-heat region, to form a second epitaxial growth layer on a surface of the formed first epitaxial growth layer;
• and
• a step of pulling the wafer holder out of the second source to complete the second epitaxial growth.

A semiconductor liquid phase epitaxial growth method comprising:

• a step of holding a plurality of semiconductor wafers by use of a wafer holder including:
• a holder body formed with:
• a wafer accommodating space in which at least one pair of semiconductor wafers can be held in such a way that reverse surfaces of the two wafers are brought into contact with an inner side wall thereof and further right surfaces of the two wafers are opposed to each other with a predetermined space between the two;
• and an inlet and outlet port for injecting and exhausting the source into and out of the wafer accommodating space, or an inlet port for injecting the source into the wafer accommodating space and an outlet port for exhausting the source out of the wafer accommodating space;
• and a wafer holder cover for covering an opening surface of the holder body;
• a step of holding the wafer holder for holding the semiconductor wafers, in a low temperature region of a heating furnace having a high temperature uniform-heat region heated by heating means to form a roughly uniform temperature distribution and the low temperature region located over the high temperature uniform-heat region and kept at a temperature lower than that of the high temperature uniform-heat region;
• a step of flowing a reducing gas and/or an inert gas into the heating furnace;
• a step of heating the heating furnace by the heating means so that the high temperature uniform-heat region becomes a predetermined temperature;
• a step of stirring a source accommodated in a source sump, in which a solute containing a semiconductor material used for epitaxial growth is dissolved in a solvent containing metal, using a stirring means;
• a step of moving the wafer holder downward from the low temperature region to the high temperature uniform-heat region, to raise temperature of the wafer holder and the semiconductor wafers to a predetermined temperature;
• a step of moving the wafer holder and the semiconductor wafers downward, to dip the wafer holder and the semiconductor wafers into the source accommodated in the source sump;
• a step of lowering temperature of the high temperature uniform-heat region, for epitaxial growth on the semiconductor wafers;
• and
• a step of pulling the wafer holder out of the source to complete the epitaxial growth.