Structure of group iii nitride seed crystal substrate and method for producing group iii nitride crystal
AssigneesThe University of Osaka, Panasonic Holdings Corporation
InventorsYusuke MORI, Masashi YOSHIMURA, Masayuki IMANISHI, Kousuke MURAKAMI, Tomio YAMASHITA
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Abstract
A Group III nitride seed crystal substrate for use in a method for producing a large-sized Group III nitride crystal with few defects is provided. A Group III nitride seed crystal substrate for use in a method for producing a Group III nitride crystal, includes: a substrate; and a plurality of Group III nitride seed crystals arranged over the flat surface of a main surface of the substrate.
Claims17
A Group III nitride seed crystal substrate for use in a method for producing a Group III nitride crystal, comprising:
- a substrate;
- and
- a plurality of Group III nitride seed crystals arranged over the flat surface of a main surface of the substrate.
A method for producing a Group III nitride seed crystal substrate for use in a method for growing a Group III nitride crystal on the Group III nitride seed crystal substrate, comprising:
- preparing a substrate;
- growing a Group III nitride seed crystal layer on the substrate;
- and
- removing a part of the Group III nitride seed crystal layer to form a Group III nitride seed crystal substrate having a plurality of Group III nitride seed crystals arranged over the flat surface of the substrate.
A method for producing a Group III nitride crystal, comprising:
- preparing a Group III nitride seed crystal substrate including a substrate and a plurality of Group III nitride crystals arranged as a plurality of seed crystals on the substrate;
- and
- growing the Group III nitride crystal on the Group III nitride seed crystal substrate by repeating a plurality of times immersing of the Group III nitride seed crystal substrate into a melt and raising of the Group III nitride seed crystal substrate out of the melt in a nitrogen-containing atmosphere, the melt containing at least one Group III element selected from gallium, aluminum, and indium, and an alkali metal,
- wherein in the course of preparing the Group III nitride seed crystal substrate, the plurality of seed crystals are arranged over the flat surface of a main surface of the substrate, to prepare the Group III nitride seed crystal substrate.
Dependencies are inferred from the claim text.