C30B 19/02
Liquid-phase epitaxial-layer growth: using molten solvents
Official title: using molten solvents, e.g. flux
C30B19/02 (Liquid-phase epitaxial-layer growth: using molten solvents) appears on 399 US grants and 345 published applications in this corpus.
Search patents in C30B- Granted patents
- 399
- Published applications
- 345
- Assignees
- 169
- Inventors
- 665
- Latest grant
- 25 Aug 2026
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| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
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| 1981 | 16 | 0 |
| 1982 | 7 | 0 |
| 1983 | 10 | 0 |
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| 1985 | 9 | 0 |
| 1986 | 14 | 0 |
| 1987 | 6 | 0 |
| 1988 | 4 | 0 |
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| 1990 | 5 | 0 |
| 1991 | 7 | 0 |
| 1992 | 2 | 0 |
| 1993 | 5 | 0 |
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| 1995 | 3 | 0 |
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| 1997 | 7 | 0 |
| 1998 | 3 | 0 |
| 1999 | 3 | 0 |
| 2000 | 3 | 0 |
| 2001 | 2 | 2 |
| 2002 | 4 | 6 |
| 2003 | 1 | 9 |
| 2004 | 4 | 8 |
| 2005 | 4 | 3 |
| 2006 | 5 | 7 |
| 2007 | 4 | 12 |
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| 2009 | 9 | 19 |
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| 2018 | 30 | 31 |
| 2019 | 27 | 15 |
| 2020 | 15 | 13 |
| 2021 | 10 | 3 |
| 2022 | 8 | 5 |
| 2023 | 2 | 15 |
| 2024 | 3 | 5 |
| 2025 | 4 | 10 |
| 2026 | 6 | 9 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
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- Manufacturing method of group-iii nitride semiconductor14 May 2026US 2026/0132538 A1The University of Osaka
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Most cited
By later US patents
- Low temperature method of preparing GaN single crystals146US 5,868,837 ACornell Research Foundation, Inc. · 1999
- Method for reducing micropipe formation in the epitaxial growth of silicon carbide and resulting silicon carbide structures85US 5,679,153 ACree Research, Inc. · 1997
- Method of forming oxidic high T.sub.c superconducting materials on substantially lattice matched monocrystalline substrates utilizing liquid phase epitaxy56US 5,055,445 ALitton Systems, Inc. · 1991
- Optical quality diamond material53US 7,740,824 B22010
- Method for making a silicon carbide substrate33US 4,582,561 ASharp Kabushiki Kaisha · 1986