Free-standing substrate for epitaxial crystal growth, and functional element
AssigneeNGK Insulators, Ltd.
InventorsMasahiro Sakai, Takashi Yoshino
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Abstract
A free-standing substrate, for growing epitaxial crystal composed of a group 13 nitride crystal selected from gallium nitride, aluminum nitride, indium nitride or a mixed crystal thereof, includes a nitrogen polar surface and group 13 element polar surface. The nitrogen polar surface is warped in a convex shape, and a chamfer part is provided in an outer peripheral part of the nitrogen polar surface.
Claims12
A free-standing substrate for epitaxial crystal growth, said free-standing substrate comprising a group 13 nitride crystal selected from gallium nitride, aluminum nitride, indium nitride or a mixed crystal thereof:
- wherein said free-standing substrate comprises a nitrogen polar surface and a group 13 element polar surface;
- wherein said nitrogen polar surface is warped in a convex shape;
- and
- wherein said nitrogen polar surface comprises an outer peripheral part comprising a chamfer part.
Dependencies are inferred from the claim text.